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1. (WO2006043687) SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2006/043687 International Application No.: PCT/JP2005/019450
Publication Date: 27.04.2006 International Filing Date: 18.10.2005
IPC:
H01L 27/10 (2006.01) ,H01L 27/28 (2006.01) ,H01L 51/05 (2006.01) ,G11C 13/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28
including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
13
Digital stores characterised by the use of storage elements not covered by groups G11C11/, G11C23/, or G11C25/173
Applicants:
ABE, Hiroko [JP/JP]; JP (UsOnly)
IWAKI, Yuji [JP/JP]; JP (UsOnly)
YUKAWA, Mikio [JP/JP]; JP (UsOnly)
YAMAZAKI, Shunpei [JP/JP]; JP (UsOnly)
ARAI, Yasuyuki [JP/JP]; JP (UsOnly)
WATANABE, Yasuko [JP/JP]; JP (UsOnly)
MORIYA, Yoshitaka [JP/JP]; JP (UsOnly)
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. [JP/JP]; 398, Hase, Atsugi-shi, Kanagawa 2430036, JP (AllExceptUS)
Inventors:
ABE, Hiroko; JP
IWAKI, Yuji; JP
YUKAWA, Mikio; JP
YAMAZAKI, Shunpei; JP
ARAI, Yasuyuki; JP
WATANABE, Yasuko; JP
MORIYA, Yoshitaka; JP
Priority Data:
2004-30883922.10.2004JP
Title (EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF A SEMICONDUCTEUR
Abstract:
(EN) The present invention provides a semiconductor device which has a storage element having a simple structure in which an organic compound layer is sandwiched between a pair of conductive layers and a manufacturing method of such a semiconductor device. With this characteristic, a semiconductor device having a storage circuit which is nonvolatile, additionally recordable, and easily manufactured and a manufacturing method of such a semiconductor device are provided. A semiconductor device according to the present invention has a plurality of field-effect transistors provided over an insulating layer and a plurality of storage elements provided over the plurality of field-effect transistors. Each of the plurality of field-effect transistors uses a single-crystal semiconductor layer as a channel portion and each of the plurality of storage elements is an element in which a first conductive layer, an organic compound layer, and a second conductive layer are stacked in order.
(FR) La présente invention concerne un dispositif à semiconducteur comportant un élément de stockage doté d’une structure simple, dans lequel une couche de composé organique est prise en sandwich entre une paire de couches conductrices, ainsi qu’un procédé de fabrication de ce dispositif à semiconducteur. L’invention concerne également un dispositif à semiconducteur comportant un circuit de stockage non volatile, enregistrable et de fabrication aisée, ainsi qu’un procédé de fabrication de ce dispositif à semiconducteur. Un dispositif à semiconducteur selon la présente invention comprend une pluralité de transistors à effet de champ montés sur une couche isolante et une pluralité d’éléments de stockage montés sur la pluralité de transistors à effet de champ. Chacun de la pluralité de transistors à effet de champ utilise une couche en semiconducteur monocristallin en tant que partie de canal et chacun de la pluralité d’éléments de stockage est un élément dans lequel une première couche conductrice, une couche de composé organique et une deuxième couche conductrice sont superposées dans cet ordre.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)