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1. (WO2006041578) THIN-FILM TRANSISTOR HAVING SEMICONDUCTING MULTI-CATION OXIDE CHANNEL AND METHODS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2006/041578 International Application No.: PCT/US2005/030555
Publication Date: 20.04.2006 International Filing Date: 30.08.2005
IPC:
H01L 29/786 (2006.01) ,H01L 29/49 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
43
characterised by the materials of which they are formed
49
Metal-insulator semiconductor electrodes
Applicants:
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. [US/US]; Hewlett-Packard Company Intellectual Property Administration 20555 S.H. 249 Houston, Texas 77070, US (AllExceptUS)
HOFFMAN, Randy [US/US]; US (UsOnly)
MARDILOVICH, Peter [US/US]; US (UsOnly)
CHIANG, Hai [US/US]; US (UsOnly)
Inventors:
HOFFMAN, Randy; US
MARDILOVICH, Peter; US
CHIANG, Hai; US
Agent:
COULMAN, Donald J. ; Hewlett-Packard Company Intellectual Property Administration P.O. Box 272400 Mail Stop 35 Fort Collins, Colorado 80527-2400, US
Priority Data:
10/961,50707.10.2004US
Title (EN) THIN-FILM TRANSISTOR HAVING SEMICONDUCTING MULTI-CATION OXIDE CHANNEL AND METHODS
(FR) TRANSISTOR A COUCHE MINCE AYANT UN CANAL D'OXYDE MULTICATIONIQUE SEMI-CONDUCTEUR ET PROCEDES
Abstract:
(EN) A thin-film transistor (TFT) (10) is fabricated by providing a substrate (20), depositing and patterning a metal gate (30), anodizing the patterned metal gate to form a gate dielectric (40) on the metal gate, depositing and patterning a channel layer (70) comprising a multi-cation oxide over at least a portion of the gate dielectric, and depositing and patterning a conductive source (50) and conductive drain (60) spaced apart from each other and disposed in contact with the channel layer.
(FR) La présente invention concerne un transistor à couche mince (TFT) (10) fabriqué au moyen d'un substrat (20), par dépôt et configuration d'une grille métallique (30), anodisation de la grille métallique configurée pour former un diélectrique (40) de grille sur la grille métallique, par dépôt et tracé d'une couche canal (70) comprenant un oxyde multicationique sur au moins une partie du diélectrique de grille et en dépôt et configuration d'une source conductrice (50) et un drain conducteur (60) espacés l'un de l'utres et disposés afin d'être en contact avec la couche canal.
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP1836730CN101036232