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1. WO2006041250 - PLASMA SOURCE FOR UNIFORM PLASMA DISTRIBUTION IN PLASM CHAMBER

Publication Number WO/2006/041250
Publication Date 20.04.2006
International Application No. PCT/KR2005/001584
International Filing Date 27.05.2005
IPC
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
CPC
H01J 37/321
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
321the radio frequency energy being inductively coupled to the plasma
Applicants
  • ADAPTIVE PLASMA TECHNOLOGY CORP. [KR]/[KR] (AllExceptUS)
  • KIM, Nam-hun [KR]/[KR] (UsOnly)
Inventors
  • KIM, Nam-hun
Agents
  • AJU INTERNATIONAL LAW & PATENT GROUP
Priority Data
10-2004-008176513.10.2004KR
Publication Language English (EN)
Filing Language Korean (KO)
Designated States
Title
(EN) PLASMA SOURCE FOR UNIFORM PLASMA DISTRIBUTION IN PLASM CHAMBER
(FR) SOURCE DE PLASMA A DISTRIBUTION UNIFORME DU PLASMA DANS LA CHAMBRE
Abstract
(EN)
Disclosed herein is a plasma source which can create plasma within a reaction chamber to process a semiconductor wafer. The plasma source comprises a bushing equipped at an upper center of the reaction chamber, and a plurality of source coils linearly extending from the bushing to a periphery of the reaction chamber. With the linear source coils, it is possible to prevent deviation in magnetic field from the center to the periphery of the plasma source in the radial direction, resulting in easy control of critical dimensions and uniform etching rate both at the center and periphery of the reaction chamber.
(FR)
La présente invention concerne une source de plasma capable de produire du plasma dans une chambre de réaction de façon à traiter une plaquette à semi-conducteurs. La source de plasma comprend une douille montée au centre supérieur de la chambre à plasma, et une pluralité de bobines sources disposées en ligne de la douille vers la périphérie de la chambre de réaction. L'alignement des bobines sources permet d'éviter la déviation radiale du champ magnétique du centre vers la périphérie de la source de plasma, ce qui permet de gérer facilement les dimensions critiques et la vitesse uniforme d'érosion au centre et à la périphérie de la chambre de réaction.
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