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1. WO2006038567 - METHOD FOR PRODUCING P-TYPE Ga2O3 FILM AND METHOD FOR PRODUCING PN JUNCTION-TYPE Ga2O3 FILM

Publication Number WO/2006/038567
Publication Date 13.04.2006
International Application No. PCT/JP2005/018180
International Filing Date 30.09.2005
IPC
H01L 21/363 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
363using physical deposition, e.g. vacuum deposition, sputtering
C30B 23/08 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
23Single-crystal growth by condensing evaporated or sublimed materials
02Epitaxial-layer growth
08by condensing ionised vapours
H01L 33/26 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
CPC
C30B 23/02
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
23Single-crystal growth by condensing evaporated or sublimed materials
02Epitaxial-layer growth
C30B 29/16
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
16Oxides
C30B 35/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
35Apparatus in general, specially adapted for the growth, production or after-treatment of single crystals or a homogeneous polycrystalline material with defined structure
H01L 21/02414
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
02414Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
H01L 21/02483
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02439Materials
02483Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
H01L 21/02565
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02565Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
Applicants
  • 学校法人早稲田大学 WASEDA UNIVERSITY [JP]/[JP] (AllExceptUS)
  • 一ノ瀬 昇 ICHINOSE, Noboru [JP]/[JP] (UsOnly)
  • 島村 清史 SHIMAMURA, Kiyoshi [JP]/[JP] (UsOnly)
  • 青木 和夫 AOKI, Kazuo [JP]/[JP] (UsOnly)
  • GARCIA, VILLORA, Encarnacion, Antonia [ES]/[JP] (UsOnly)
Inventors
  • 一ノ瀬 昇 ICHINOSE, Noboru
  • 島村 清史 SHIMAMURA, Kiyoshi
  • 青木 和夫 AOKI, Kazuo
  • GARCIA, VILLORA, Encarnacion, Antonia
Agents
  • 平田 忠雄 HIRATA, Tadao
Priority Data
2004-29084501.10.2004JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR PRODUCING P-TYPE Ga2O3 FILM AND METHOD FOR PRODUCING PN JUNCTION-TYPE Ga2O3 FILM
(FR) PROCÉDÉ DE FABRICATION DE FILM DE Ga2O3 DE TYPE P ET PROCÉDÉ DE FABRICATION DE FILM DE Ga2O3 DE TYPE JONCTION PN
(JA) p型Ga2O3膜の製造方法およびpn接合型Ga2O3膜の製造方法
Abstract
(EN)
Disclosed are a method for producing a p-type Ga2O3 film and a method for producing a pn junction-type Ga2O3 film which enable to form a thin film composed of a high-quality Ga2O3 compound semiconductor. Specifically, the pressure in a vacuum chamber (52) is reduced, and while introducing oxygen radicals, a cell (55a) is heated for producing a Ga molecular beam (90) and a cell (55b) is heated for producing an Mg molecular beam (90). Then, a substrate (25) composed of a Ga2O3 compound is irradiated with the Ga molecular beam (90) and the Mg molecular beam (90), so that a p-type &bgr;-Ga2O3 film composed of p-type &bgr;-Ga2O3 is grown on the substrate (25).
(FR)
L’invention concerne un procédé de fabrication d'un film de Ga2O3 de type p et un procédé de fabrication d’un film de Ga2O3 de type à jonction pn permettant de constituer un mince film composé d’un semi-conducteur de composé de Ga2O3 de grande qualité. Spécifiquement, la pression dans une chambre à vide (52) est réduite, et tout en introduisant des radicaux d’oxygène, on chauffe une cellule (55a) pour créer un faisceau moléculaire de Ga (90) et l’on chauffe une cellule (55b) pour créer un faisceau moléculaire de Mg (90). Ensuite, on irradie un substrat (25) constitué d’un composé de Ga2O3 avec le faisceau moléculaire de Ga (90) et le faisceau moléculaire de Mg (90), de sorte qu’un film de &bgr;-Ga2O3 de type p composé de &bgr;-Ga2O3 de type p se développe sur le substrat (25).
(JA)
 高品質のGa系化合物半導体からなる薄膜を形成することができるp型Ga膜の製造方法およびpn接合型Ga膜の製造方法を提供する。  真空層52内を減圧し、酸素ラジカルを注入しながらセル55aを加熱し、Gaの分子線90、およびセル55bを加熱し、Mgの分子線90をGa系化合物からなる基板25上に照射して、基板25上にp型β-Gaからなるp型β-Ga層を成長させる。
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Latest bibliographic data on file with the International Bureau