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1. WO2006038349 - QUARTZ GLASS EXCELLING IN PLASMA CORROSION RESISTANCE AND PROCESS FOR PRODUCING THE SAME

Publication Number WO/2006/038349
Publication Date 13.04.2006
International Application No. PCT/JP2005/010605
International Filing Date 09.06.2005
IPC
C03C 3/06 2006.01
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
3Glass compositions
04containing silica
06with more than 90% silica by weight, e.g. quartz
C03B 20/00 2006.01
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
BMANUFACTURE OR SHAPING OF GLASS, OR OF MINERAL OR SLAG WOOL; SUPPLEMENTARY PROCESSES IN THE MANUFACTURE OR SHAPING OF GLASS, OR OF MINERAL OR SLAG WOOL
20Processes specially adapted for the production of quartz or fused silica articles
C03C 3/095 2006.01
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
3Glass compositions
04containing silica
076with 40% to 90% silica by weight
095containing rare earths
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
CPC
C03B 19/01
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
19Other methods of shaping glass
01by progressive fusion ; or sintering; of powdered glass onto a shaping substrate, i.e. accretion ; , e.g. plasma oxidation deposition
C03B 19/06
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
19Other methods of shaping glass
06by sintering, ; e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
C03B 19/066
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
19Other methods of shaping glass
06by sintering, ; e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
066for the production of quartz or fused silica articles
C03B 19/09
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
19Other methods of shaping glass
09by fusing powdered glass in a shaping mould
C03B 19/1438
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
19Other methods of shaping glass
14by gas- ; or vapour-; phase reaction processes
1415Reactant delivery systems
1438for delivering and depositing additional reactants as liquids or solutions, e.g. solution doping of the article or deposit
C03B 19/1453
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
19Other methods of shaping glass
14by gas- ; or vapour-; phase reaction processes
1453Thermal after-treatment of the shaped article, e.g. dehydrating, consolidating, sintering
Applicants
  • 信越石英株式会社 SHIN-ETSU QUARTZ PRODUCTS CO., LTD. [JP]/[JP] (AllExceptUS)
  • 佐藤 龍弘 SATO, Tatsuhiro [JP]/[JP] (UsOnly)
  • 吉田 宜正 YOSHIDA, Nobumasa [JP]/[JP] (UsOnly)
  • 遠藤 護 ENDO, Mamoru [JP]/[JP] (UsOnly)
Inventors
  • 佐藤 龍弘 SATO, Tatsuhiro
  • 吉田 宜正 YOSHIDA, Nobumasa
  • 遠藤 護 ENDO, Mamoru
Agents
  • 石原 詔二 ISHIHARA, Shoji
Priority Data
2004-28840730.09.2004JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) QUARTZ GLASS EXCELLING IN PLASMA CORROSION RESISTANCE AND PROCESS FOR PRODUCING THE SAME
(FR) VERRE DE QUARTZ EXCELLENT EN MATIÈRE DE RÉSISTANCE À LA CORROSION AU PLASMA ET PROCÉDÉ DE FABRICATION DUDIT VERRE
(JA) プラスマ耐食性に優れた石英ガラス及びその製造方法
Abstract
(EN)
A quartz glass that as a jig material for plasma reaction employed in the production of semiconductors, excels in plasma corrosion resistance, especially corrosion resistance to F based plasma gas, and that can be used without causing any abnormality of silicon wafer; a relevant quartz glass jig; and a process for producing them. There is provided a quartz glass comprising two or more types of metal elements in a total amount of 0.1 to 20 wt.%, wherein the metal elements are composed of a first metal element consisting of at least one member selected from among those of Group 3B of the periodic table and a second metal element consisting of at least one member selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids and actinoids, with the proviso that the maximum concentration of each of second metal elements is ≤ 2.0 wt.%.
(FR)
L’invention concerne un verre de quartz qui en tant que matériau de gabarit pour réaction au plasma employé dans la fabrication de semi-conducteurs, est excellent en matière de résistance à la corrosion au plasma, en particulier la résistance à la corrosion au gaz de plasma à base F, et que l’on peut utiliser sans provoquer d’anomalie de plaquette de silicium ; un gabarit approprié de verre de quartz ; et un procédé de fabrication de ceux-ci. L’invention concerne un verre de quartz comprenant deux types d’éléments de métal ou plus dans une quantité totale de 0,1 à 20 % en poids, où les éléments de métal se composent d’un premier élément de métal consistant en au moins un élément sélectionné parmi ceux du groupe 3B du tableau périodique et un second élément de métal consistant en au moins un élément sélectionné parmi le groupe englobant Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, les lanthanoïdes et les actinoïdes, sous réserve que la concentration maximale de chacun des seconds éléments de métal soit ≤ 2,0 % en poids.
(JA)
 半導体製造に用いられるプラズマ反応用治具材料として、プラズマ耐食性、特にF系プラズマガスに対する耐食性に優れ、シリコンウエーファにも異常を与えないで使用可能な石英ガラス及び石英ガラス治具並びにそれらの製造方法を提供する。2種類以上の金属元素を併せて0.1~20wt%含有する石英ガラスであって、該金属元素が周期律表第3B族から選ばれた少なくとも1種類である第1の金属元素と、Mg、Ca、Sr、Ba、Sc、Y、Ti、Zr、Hf、ランタノイド及びアクチノイドからなる群から選ばれた少なくとも1種類である第2の金属元素からなり、第2の金属元素の個々の最大濃度が、2.0wt%以下であるようにした。                                                                       
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