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1. (WO2006020043) METAL SOURCE POWER TRANSISTOR AND METHOD OF MANUFACTURE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2006/020043 International Application No.: PCT/US2005/025187
Publication Date: 23.02.2006 International Filing Date: 15.07.2005
IPC:
H01L 29/78 (2006.01) ,H01L 29/739 (2006.01)
Applicants: SNYDER, John, P.[US/US]; US (UsOnly)
SPINNAKER SEMICONDUCTOR, INC.[US/US]; 1325 American Blvd E., Suite 1 A Bloomington, Minnesota 55425, US (AllExceptUS)
Inventors: SNYDER, John, P.; US
Agent: MIN(AMY), S., Xu; Dorsey & Whitney LLP Intellectual Property Department Suite 1500 50 South Sixth Street Minneapolis, MN 55402-1498, US
Priority Data:
60/588,21315.07.2004US
Title (EN) METAL SOURCE POWER TRANSISTOR AND METHOD OF MANUFACTURE
(FR) TRANSISTOR DE PUISSANCE A SOURCE METALLIQUE ET PROCEDE DE PRODUCTION ASSOCIE
Abstract: front page image
(EN) A metal source power transistor device and method of manufacture is provided, wherein the metal source power transistor having a source made of metal and which forms a Schottky barrier with the body region and channel region of the transistor. The metal source power transistor is unconditionally immune from parasitic bipolar action and, therefore, the effects of snap-back and latch-up are avoided, without the need for a body contact. The ability to allow the body to float in the metal source power transistor reduces the process complexity and allows for more compact device layout.
(FR) L'invention concerne un transistor de puissance à source métallique et un procédé de production associé. Le transistor de puissance à source métallique de l'invention comprend une source constituée de métal et formant une barrière de Schottky avec la partie corps et la partie canal du transistor. Ledit transistor de puissance à source métallique est protégé de manière inconditionnelle contre toute action bipolaire parasite, ce qui permet d'éviter les effets de retrait et de déclenchement parasite, sans contact avec le corps. La possibilité de faire flotter le corps dans ledit transistor de puissance à source métallique réduit la complexité du procédé et permet d'obtenir une structure de dispositif plus compacte.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)