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1. (WO2006019594) HIGH FREQUENCY VIA WITH STRIPPED SEMI-RIGID CABLE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2006/019594 International Application No.: PCT/US2005/024113
Publication Date: 23.02.2006 International Filing Date: 07.07.2005
IPC:
H05K 1/11 (2006.01)
Applicants: GREELEY, John, S.[US/US]; US (UsOnly)
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION, INC.[US/US]; 65 Spit Brook Road NHQ01-719 Nashua, NH 03060, US (AllExceptUS)
Inventors: GREELEY, John, S.; US
Agent: LONG, Daniel, J.; Bae Systems Information and Electronic Systems Integration Inc. 65 Spit Brook Road, NHQ01-719 Nashua, NH 03060, US
Priority Data:
10/903,53430.07.2004US
Title (EN) HIGH FREQUENCY VIA WITH STRIPPED SEMI-RIGID CABLE
(FR) TROU D'INTERCONNEXION HAUTE FREQUENCE AVEC CABLES SEMI-RIGIDE DENUDE
Abstract: front page image
(EN) A high frequency coax via structure is configured with a stripped semi-rigid cable (no shield), and an inductive compensation loop to mitigate transition discontinuity between that via structure's center conductor and the pad to which the center conductor is connected. The performance of top-to-bottom microwave transitions at high frequencies (e.g., 1 to 12 GHz) for such boards is enhanced. A non-metallized via hole embodiment that is configured with surrounding ground vias provides a greater degree of compensation for connection pads associated with greater capacitance (such as those coupled to a component).
(FR) La présente invention concerne une structure de trou d'interconnexion coaxial haute fréquence agencé avec un câble semi-rigide strié (non blindé) et une boucle de compensation inductive destinée à atténuer la discontinuité de transition entre le conducteur central de cette structure de trou d'interconnexion et la plage sur laquelle ce conducteur central est connecté. La performance des transitions micro-ondes de haut en bas à hautes fréquence (par exemple 1 à 2 gigahertz) pour ces cartes est améliorée. Un mode de réalisation de trou d'interconnexion non métallisé qui est agencé avec des trous d'interconnexion à la masse offrent un degré de compensation supérieure pour des plages de connexion associées à une plus grande capacitance (telles que celle couplées à un composant.).
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)