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1. (WO2006019572) ETCHING WITH ELECTROSTATICALLY ATTRACTED IONS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2006/019572 International Application No.: PCT/US2005/023925
Publication Date: 23.02.2006 International Filing Date: 06.07.2005
IPC:
B81C 1/00 (2006.01)
B PERFORMING OPERATIONS; TRANSPORTING
81
MICRO-STRUCTURAL TECHNOLOGY
C
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICRO-STRUCTURAL DEVICES OR SYSTEMS
1
Manufacture or treatment of devices or systems in or on a substrate
Applicants: VOSS, Curtis[US/US]; US (UsOnly)
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.[US/US]; Hewlett-Packard Company Intellectual Property Administration 20555 S.H. 249 Houston, Texas 77070, US (AllExceptUS)
Inventors: VOSS, Curtis; US
Agent: MYERS, Timothy F. ; Hewlett-Packard Company Intellectual Property Administration P.O. Box 272400 Mail Stop 35 Fort Collins, Colorado 80527-2400, US
Priority Data:
10/895,73321.07.2004US
Title (EN) ETCHING WITH ELECTROSTATICALLY ATTRACTED IONS
(FR) GRAVURE PAR ATTRACTION ÉLECTROSTATIQUE D'IONS
Abstract:
(EN) A technique comprises directing a plasma having at least first and second gasses at a substrate (202). The substrate (202) is at least partially covered with at least the first (206) and second layers (204). Ions of the first gas are electrostatically attracted towards the substrate (202). The second gas selectively etches the first layer (206) relative to the second layer (204).
(FR) La présente invention a pour objet une technique consistant en la projection d’un plasma composé au minimum de deux gaz, désignés par les termes « premier » et « second », sur un substrat (202). Ledit substrat (202) est au moins partiellement recouvert par, au minimum, les couches première (206) et seconde (204). Les ions du premier gaz sont attirés vers le substrat (202) par une force de type électrostatique. Le second gaz grave de façon sélective la première couche (206) préférentiellement à la seconde (204).
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)