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Pub. No.: WO/2006/016160 International Application No.: PCT/GB2005/003146
Publication Date: 16.02.2006 International Filing Date: 10.08.2005
IPC:
H01L 29/74 (2006.01) ,H01L 29/739 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
74
Thyristor-type devices, e.g. having four-zone regenerative action
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
72
Transistor-type devices, i.e. able to continuously respond to applied control signals
739
controlled by field effect
Applicants: MADATHIL, Sankara, Narayanan, Ekkanath[IN/GB]; GB (UsOnly)
SWEET, Mark, Robert[GB/GB]; GB (UsOnly)
VERSHININ, Konstantin, Vladislavovich[RU/GB]; GB (UsOnly)
ECO SEMICONDUCTORS LIMITED[GB/GB]; 2 Wilmington Court Glebe Road Leicester LE2 2LD, GB (AllExceptUS)
Inventors: MADATHIL, Sankara, Narayanan, Ekkanath; GB
SWEET, Mark, Robert; GB
VERSHININ, Konstantin, Vladislavovich; GB
Agent: LAMBERT, Ian, Robert ; Wynne-Jones, Laine & James 22 Rodney Road Cheltenham Glos GL50 1JJ, GB
Priority Data:
0417749.910.08.2004GB
Title (EN) BIPOLAR MOSFET DEVICES
(FR) DISPOSITIFS MOSFET BIPOLAIRES
Abstract:
(EN) According to the invention there is provided a semiconductor device including: at least one cell including a base region of a first conductivity type having disposed therein at least one emitter region of a second conductivity type; a first well region of a second conductivity type; a second well region of a first conductivity type; a drift region of a second conductivity type; a collector region of a first conductivity type; a collector contact; in which each cell is disposed within the first well region and the first well region is disposed within the second well region; the device further including: a first gate in communication with a base region so that a MOSFET channel can be formed between an emitter region and the first well region; and at least one embedded region embedded in the first well region.
(FR) L'invention concerne un dispositif à semi-conducteur qui comprend: au moins une cellule comportant une région de base d'un premier type de conductivité sur laquelle est disposée au moins une région d'émetteur d'un second type de conductivité; une première région de puits d'un second type de conductivité; une seconde région de puits d'un premier type de conductivité; une région de dérive d'un second type de conductivité; une région de collecteur d'un premier type de conductivité; un contact de collecteur; dans lequel chaque cellule est disposée dans la première région de puits et la première région de puits est disposée dans la seconde région depuis. Ce dispositif comprend également: une première grille en communication avec une région de base de sorte qu'un canal MOSFET soit formé entre une région d'émetteur et la première région de puits; et au moins une région intégrée dans la première région de puits.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)