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1. (WO2006015185) GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2006/015185 International Application No.: PCT/US2005/026913
Publication Date: 09.02.2006 International Filing Date: 01.08.2005
IPC:
H01L 31/00 (2006.01) ,H01L 31/0328 (2006.01) ,H01L 21/302 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0256
characterised by the material
0264
Inorganic materials
0328
including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272-H01L31/032174
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
Applicants:
AONEX TECHNOLOGIES, INC. [US/US]; 129 North Hill Ave. Suite 108 Pasadena, CA 91106, US (AllExceptUS)
ZAHLER, James, M. [US/US]; US (UsOnly)
ATWATER, Harry, A., Jr. [US/US]; US (UsOnly)
MORRAL, Anna, Fontcuberta, I. [ES/FR]; US (UsOnly)
Inventors:
ZAHLER, James, M.; US
ATWATER, Harry, A., Jr.; US
MORRAL, Anna, Fontcuberta, I.; US
Agent:
MAEBIUS, Stephen, B. ; Foley & Lardner LLP Washington Harbour 3000 K Street, N.W. Suite 500 Washington, DC 20007-5143, US
Priority Data:
60/592,67030.07.2004US
Title (EN) GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER
(FR) CELLULE SOLAIRE A TRIPLE JONCTION GAINP/GAAS/SI OBTENUE PAR LIAISON DE TRANCHES ET TRANSFERT DE COUCHES
Abstract:
(EN) A multi-junction solar cell includes a silicon solar subcell, a GaInP solar subcell, and a GaAs solar subcell located between the silicon solar subcell and the GaInP solar subcell. The GaAs solar subcell is bonded to the silicon solar subcell such that a bonded interface exists between these subcells.
(FR) Cette invention concerne une cellule solaire multijonction comprenant une cellule secondaire solaire en silicium, une cellule secondaire solaire en GaInP et une cellule secondaire solaire en GaAs intercalée entre la cellule secondaire solaire en silicium et la cellule secondaire solaire en GaInP. La cellule secondaire solaire en GaAs est liée à la cellule secondaire solaire en silicium de façon qu'une interface liée soit présente entre ces cellules secondaires.
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)