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1. WO2006014397 - LOW-LOSS SUBSTRATE FOR HIGH QUALITY COMPONENTS

Publication Number WO/2006/014397
Publication Date 09.02.2006
International Application No. PCT/US2005/023692
International Filing Date 30.06.2005
IPC
H01L 29/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
H01L 29/76 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
H01L 29/94 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
92Capacitors with potential-jump barrier or surface barrier
94Metal-insulator-semiconductors, e.g. MOS
CPC
H01F 17/0006
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
17Fixed inductances of the signal type
0006Printed inductances
H01L 21/764
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
76Making of isolation regions between components
764Air gaps
H01L 27/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
H01P 11/006
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
11Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
001Manufacturing waveguides or transmission lines of the waveguide type
006Manufacturing dielectric waveguides
Applicants
  • GEORGIA TECH RESEARCH CORPORATION [US]/[US]
Inventors
  • AYAZI, Farrokh
  • RAIESZADEH, Mina
Agents
  • FLOAT, Kenneth, W.
Priority Data
60/585,49602.07.2004US
null28.06.2005US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) LOW-LOSS SUBSTRATE FOR HIGH QUALITY COMPONENTS
(FR) SUBSTRAT À FAIBLES PERTES POUR COMPOSANTS DE GRANDE QUALITÉ
Abstract
(EN) Methods and apparatus providing high quality factor (Q) components on low loss substrates. A substrate is fabricated having a plurality of substrate support elements. A bridging layer is formed on the substrate that is supported by the support elements. A component is formed on the bridging layer. CMOS-compatible processing of silicon substrates may be used. One or more cavities comprising high aspect-ratio trenches may be formed using a low-temperature fabrication sequence which reduces the high-frequency losses in silicon at RF frequencies. The cavities (trenches) are subsequently bridged over or refilled with a dielectric to close the open areas and create a rigid low-loss structure. The structures mechanically-robust and are compatible with any packaging technology. An exemplary one-turn 0.8 nH inductor fabricated on trenched silicon support elements exhibited a very high peak Q of 70.6 at 8.75 GHz with a self-resonant frequency larger than 15 GHz.
(FR) L'invention concerne des procédés et un dispositif permettant d'obtenir des composants présentant un facteur de qualité élevé (Q) sur des substrats à faibles pertes. Selon le mode de réalisation décrit dans cette invention, le substrat fabriqué comprend plusieurs éléments de maintien de substrat. Une couche de colmatage est formée sur le substrat qui est maintenu par les éléments de maintien. Un composant est formé sur la couche de colmatage. Un traitement compatible avec CMOS des substrats en silicium peut être utilisé. Une ou plusieurs cavités comprenant des sillons à rapport de forme élevé peuvent être formées au moyen d'une séquence de fabrication à basse température qui réduit les pertes de haute fréquence dans le silicium à des fréquences RF. Les cavités (sillons) sont ensuite colmatées ou remplies avec un diélectrique de manière à obturer les zones ouvertes et à créer une structure à faibles pertes rigide. Les structures sont mécaniquement robuste et elles sont compatibles avec toutes les technologies de conditionnement. Un inducteur à desserrage rapide 0,8 nH fabriqué sur les éléments de maintien en silicium striés, présente une valeur de crête très élevée Q de 70,6 à 8,75 GHz avec une fréquence propre supérieure à 15 GHz.
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