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Pub. No.: WO/2006/013968 International Application No.: PCT/JP2005/014413
Publication Date: 09.02.2006 International Filing Date: 05.08.2005
IPC:
C23C 14/34 (2006.01) ,H01L 21/31 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
Applicants: SONG, Yizhou[JP/JP]; JP (UsOnly)
ARAI, Tetsuji[JP/JP]; JP (UsOnly)
CHIBA, Koki[JP/JP]; JP (UsOnly)
SAKURAI, Takeshi[JP/JP]; JP (UsOnly)
JIANG, Yousong[CN/JP]; JP (UsOnly)
SHINCRON CO., LTD.[JP/JP]; 2-6, Minami-ohi 3-chome, Shinagawa-ku, Tokyo 1408540, JP (AllExceptUS)
Inventors: SONG, Yizhou; JP
ARAI, Tetsuji; JP
CHIBA, Koki; JP
SAKURAI, Takeshi; JP
JIANG, Yousong; JP
Agent: AKIYAMA, Atsushi; Toranomon 37 Mori Building 5-1, Toranomon 3-chome Minato-ku, Tokyo 1050001, JP
Priority Data:
2004-22989205.08.2004JP
Title (EN) THIN-FILM FORMING APPARATUS
(FR) APPAREIL DE FORMATION DE FILM MINCE
(JA) 薄膜形成装置
Abstract:
(EN) [PROBLEMS] To provide a thin-film forming apparatus capable of forming a film by bringing ions of some degree in plasma into contact with the thin-film. [MEANS FOR SOLVING PROBLEMS] This thin-film forming apparatus (1) comprises a plasma generating means (80) disposed in a vacuum chamber (11) at a position corresponding to an opening (11a) and generating the plasma in the vacuum chamber (11), a substrate holder (13) for holding a substrate in the vacuum chamber (11), and an ion annihilating means (90) installed between the plasma generating means (80) and the substrate holder (13). The area of the ion annihilating means (90) which shields the substrate holder (13) from the plasma generating means (80) in a direction from the plasma generating means (80) to the substrate holder (13) is formed smaller than the residual area thereof in the direction from the plasma generating means (80) to the substrate holder (13).
(FR) L’invention porte sur un appareil de formation de film mince capable de former un film en amenant des ions d’un certain degré dans du plasma au contact du film mince. Cet appareil de formation de film mince (1) comprend un moyen générateur de plasma (80) disposé dans une chambre à vide (11) à un endroit correspondant à une ouverture (11a) et générant le plasma dans la chambre à vide (11), un porte-substrat (13) pour maintenir un substrat dans la chambre à vide (11) et un moyen d’annihilation ionique (90) installé entre le moyen générateur de plasma (80) et le porte-substrat (13). La surface du moyen d’annihilation ionique (90) protégeant le porte-substrat (13) du moyen générateur de plasma (80) dans une direction allant du moyen générateur de plasma (80) au porte-substrat (13) est plus petite que la surface résiduelle de celui-ci dans la direction allant du moyen générateur de plasma (80) au porte-substrat (13).
(JA) 【課題】 プラズマ中のある程度の割合のイオンを薄膜に接触させて成膜の形成を行うことができる薄膜形成装置を提供する。 【解決手段】 薄膜形成装置1は、真空槽11の前記開口11aに対応する位置に設けられ真空槽11内にプラズマを発生させるプラズマ発生手段80と、真空槽11内で基体を保持する基体保持手段13と、プラズマ発生手段80と基体保持手段13との間に設けられたイオン消滅手段90を備える。プラズマ発生手段80から基板ホルダ13を臨んだときの、イオン消滅手段90がプラズマ発生手段80に対して基体保持手段13を遮蔽する面積は、プラズマ発生手段80から基板ホルダ13を臨む残余の面積よりも狭く構成されている。
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)