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1. (WO2006013867) TRANSPARENT ELECTRODE FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/013867    International Application No.:    PCT/JP2005/014137
Publication Date: 09.02.2006 International Filing Date: 27.07.2005
IPC:
H01L 21/28 (2006.01), H01L 33/06 (2010.01), H01L 33/14 (2010.01), H01L 33/32 (2010.01), H01L 33/42 (2010.01)
Applicants: SHOWA DENKO K.K. [JP/JP]; 13-9, Shiba Daimon, 1-chome, Minato-ku, Tokyo 105-8518 (JP) (For All Designated States Except US).
EITOH, Nobuo [JP/JP]; (JP) (For US Only).
MURAKI, Noritaka [JP/JP]; (JP) (For US Only).
MIKI, Hisayuki [JP/JP]; (JP) (For US Only).
WATANABE, Munetaka [JP/JP]; (JP) (For US Only)
Inventors: EITOH, Nobuo; (JP).
MURAKI, Noritaka; (JP).
MIKI, Hisayuki; (JP).
WATANABE, Munetaka; (JP)
Agent: FUKUDA, Kenzo; Kashiwaya Bldg., 6-13 Nishihinbashi 1-chome, Minato-ku, Tokyo 105-0003 (JP)
Priority Data:
2004-228968 05.08.2004 JP
60/602,648 19.08.2004 US
Title (EN) TRANSPARENT ELECTRODE FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE
(FR) ÉLECTRODE TRANSPARENTE POUR DISPOSITIF LUMINESCENT SEMI-CONDUCTEUR
Abstract: front page image
(EN)A transparent electrode for a gallium nitride-based compound semiconductor light-emitting device includes a p-type semiconductor layer (5), a contact metal layer (1) formed by ohmic contact on the p-type semiconductor layer, an current diffusion layer (12) formed on the contact metal layer and having a lower magnitude of resistivity on the plane of the transparent electrode than the contact metal, and a bonding pad (13) formed on the current diffusion layer. The transparent electrode is at an advantage in widening the surface of light emission in the p-type semiconductor layer, decreasing the operation voltage in the forward direction, and enabling the bonding pad to provide excellent adhesive strength.
(FR)L’invention porte sur une électrode transparente pour dispositif luminescent semi-conducteur composé à base de nitrure de gallium comprenant une couche semi-conductrice de type p (5), une couche métallique de contact (1) formée par contact ohmique sur la couche semi-conductrice de type p, une couche de diffusion de courant (12) formée sur la couche métallique de contact et ayant une magnitude de résistivité sur le plan de l’électrode transparente plus faible que le métal de contact et un patin de liaison (13) formé sur la couche de diffusion de courant. L’électrode transparente permet avantageusement d’élargir la surface d’émission de lumière dans la couche semi-conductrice de type p, en abaissant la tension d’exploitation dans le sens direct et permettant au patin de liaison de fournir une excellent force d’adhérence.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)