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Pub. No.:    WO/2006/013430    International Application No.:    PCT/IB2005/002187
Publication Date: 09.02.2006 International Filing Date: 26.07.2005
Chapter 2 Demand Filed:    22.05.2006    
G01N 27/30 (2006.01), C02F 1/461 (2006.01), C25B 11/12 (2006.01)
Applicants: ELEMENT SIX LIMITED [GB/GB]; Freeport, Ballasalla, Isle of Man, IM99 6AQ (GB) (For All Designated States Except US).
DONALD, Heather, June [ZA/ZA]; (ZA) (MW only).
WORT, Christopher, John, Howard [GB/GB]; (GB) (For US Only).
SCARSBROOK, Geoffrey, Alan [GB/GB]; (GB) (For US Only).
YOST III, William, Joseph [GB/GB]; (GB) (For US Only)
Inventors: WORT, Christopher, John, Howard; (GB).
SCARSBROOK, Geoffrey, Alan; (GB).
YOST III, William, Joseph; (GB)
Agent: DONALD, Heather, June; Spoor & Fisher, P.O. Box 41312, Craighall, 2024 Johannesburg (ZA)
Priority Data:
0416715.1 27.07.2004 GB
60/613,718 29.09.2004 US
Abstract: front page image
(EN)The use of lightly doped CVD diamond layers in heavily doped CVD diamond electrodes controls the erosion mechanisms that cause significant loss of mass and thickness of the electrodes in electrochemical applications. A thin surface layer of lightly doped CVD diamond with relatively low electrical conductivity is tolerable, and in some circumstances beneficial, to the electrochemical process provided that the overall impedance of the system is not radically increased.
(FR)L’invention concerne l’utilisation de couches de diamants CVD légèrement dopés dans des électrodes en diamant CVD fortement dopé afin de contrôler les mécanismes d’érosion qui engendrent une forte perte de masse et d’épaisseur des électrodes dans des applications électrochimiques. Une couche superficielle mince de diamants CVD légèrement dopés d’une conductivité électrique relativement faible est tolérable, et peut, dans certaines circonstances, bénéficier au processus électrochimique si l’impédance globale du système n’est pas radicalement accrue.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)