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Machine translation
1. (WO2006012338) FORMING HIGH-K DIELECTRIC LAYERS ON SMOOTH SUBSTRATES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/012338    International Application No.:    PCT/US2005/022573
Publication Date: 02.02.2006 International Filing Date: 24.06.2005
IPC:
C23C 16/02 (2006.01), H01L 21/306 (2006.01)
Applicants: INTEL CORPORATION [US/US]; 2200 Mission College Boulevard, Santa Clara, CA 95052 (US) (For All Designated States Except US).
BRASK, Justin [CA/US]; (US) (For US Only).
KAVALIEROS, Jack [US/US]; (US) (For US Only).
DOCZY, Mark [US/US]; (US) (For US Only).
METZ, Matthew [US/US]; (US) (For US Only).
DATTA, Suman [IN/US]; (US) (For US Only).
SHAH, Uday [NP/US]; (US) (For US Only).
DEWEY, Gilbert [US/US]; (US) (For US Only).
CHAU, Robert [US/US]; (US) (For US Only)
Inventors: BRASK, Justin; (US).
KAVALIEROS, Jack; (US).
DOCZY, Mark; (US).
METZ, Matthew; (US).
DATTA, Suman; (US).
SHAH, Uday; (US).
DEWEY, Gilbert; (US).
CHAU, Robert; (US)
Agent: TROP, Timothy, N.; Trop, Pruner & Hu, P.C., 1616 S. Voss Rd., Suite 750, Houston, TX 77057-2631 (US)
Priority Data:
10/882,734 30.06.2004 US
Title (EN) FORMING HIGH-K DIELECTRIC LAYERS ON SMOOTH SUBSTRATES
(FR) FORMATION DE COUCHES DIELECTRIQUES A COEFFICIENT K ELEVE SUR DES SUSBTRATS LISSES
Abstract: front page image
(EN)A buffer layer and a high-k metal oxide dielectric may be formed over a smooth silicon substrate using ozone and sonic energy. The substrate smoothness may reduce column growth of the high-k metal oxide gate dielectric. The surface of the substrate may be saturated with hydroxyl terminations prior to deposition.
(FR)Aux fins de l'invention, on peut réaliser une couche tampon et un diélectrique en oxyde métallique à coefficient k élevé sur un substrat en silicium lisse. Le caractère lisse du substrat permet de réduire la croissance colonnaire du diélectrique de grille en oxyde métallique à coefficient k élevé. La surface du substrat peut être saturée avec des terminaisons hydroxyle avant le dépôt.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)