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1. (WO2006011912) METHOD OF FORMING STRAINED SI/SIGE ON INSULATOR WITH SILICON GERMANIUM BUFFER
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/011912    International Application No.:    PCT/US2005/005085
Publication Date: 02.02.2006 International Filing Date: 16.02.2005
IPC:
H01L 21/76 (2006.01)
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road, Armonk, NY 10504 (US) (For All Designated States Except US).
CHEN, Huajie [CN/US]; (US) (For US Only).
BEDELL, Stephen, W. [US/US]; (US) (For US Only)
Inventors: CHEN, Huajie; (US).
BEDELL, Stephen, W.; (US)
Agent: PEPPER, Margaret, A.; IBM Corporation, Dept. 18G, Bldg. 300/482, 2070 Route 52, Hopewell Junction, NY 10504 (US)
Priority Data:
10/710,255 29.06.2004 US
Title (EN) METHOD OF FORMING STRAINED SI/SIGE ON INSULATOR WITH SILICON GERMANIUM BUFFER
(FR) PROCÉDÉ DE FORMATION DE SI/SIGE SUR UN ISOLATEUR AVEC TAMPON EN GERMANIUM AU SILICIUM
Abstract: front page image
(EN)A method is disclosed for forming a semiconductor wafer having a strained Si or SiGe layer on an insulator layer. The method produces a structure having a SiGe buffer layer (43) between the insulator layer (45) and the strained Si/SiGe layer (42), but eliminates the need for Si epitaxy after bonding. The method also eliminates interfacial contamination between strained Si and SiGe buffer layer, and allows the formation of SVSiGe layers having a total thickness exceeding the critical thickness of the strained Si layer.
(FR)Ce procédé concerne la formation d'une plaque semi-conductrice disposant d'une plaque de Si ou SiGe contraint sur une plaque isolante. Le procédé produit une structure ayant une couche tampon de SiGe (43) entre la couche isolante (45) et la couche de Si/SiGe contraint (42) mais évite d'avoir recours à de l'épitaxie Si après la liaison. Le procédé évite aussi la contamination inter-faciale entre la couche tampon de Si et SiGe contraint et permet la formation de couches SVSiGe ayant une épaisseur totale dépassant l'épaisseur critique de la couche de Si contraint.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)