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1. WO2006011668 - OPTICAL SEMICONDUCTOR DEVICE

Publication Number WO/2006/011668
Publication Date 02.02.2006
International Application No. PCT/JP2005/014259
International Filing Date 28.07.2005
IPC
H01S 1/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
1Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
02solid
G01N 22/00 2006.1
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
22Investigating or analysing materials by the use of microwaves
CPC
G01N 21/3581
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
17Systems in which incident light is modified in accordance with the properties of the material investigated
25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
31Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
35using infra-red light
3581using far infra-red light; using Terahertz radiation
H01L 31/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
H01S 1/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
1Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
02solid
Applicants
  • CANON KABUSHIKI KAISHA [JP]/[JP] (AllExceptUS)
  • OUCHI, Toshihiko [JP]/[JP] (UsOnly)
  • ITSUJI, Takeaki [JP]/[JP] (UsOnly)
  • KASAI, Shintaro [JP]/[JP] (UsOnly)
Inventors
  • OUCHI, Toshihiko
  • ITSUJI, Takeaki
  • KASAI, Shintaro
Agents
  • OKABE, Masao
Priority Data
2004-22365630.07.2004JP
2005-02521001.02.2005JP
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) OPTICAL SEMICONDUCTOR DEVICE
(FR) DISPOSITIF OPTIQUE A SEMI-CONDUCTEUR
Abstract
(EN) The present invention provides an optical semiconductor device including a semiconductor thin film (4) having photoconductivity and a pair of electrodes (5) and (10) for applying an electric field to an inside of the semiconductor thin film (4) in a direction approximately vertical to a surface of the semiconductor thin film (4), wherein the semiconductor thin film (4) generates an electromagnetic wave when light is applied to a region thereof to which the electric field is applied. The electrodes are provided to a front surface and a back surface of the semiconductor thin film (4) with the semiconductor thin film interposed therebetween.
(FR) L'invention concerne un dispositif optique à semi-conducteur comportant une couche mince semiconductrice (4) à photoconductivité et deux électrodes (5) et (10) pour appliquer un champ électrique à l'intérieur de la couche mince semiconductrice (4) dans une direction sensiblement verticale relativement à une surface de la couche mince semiconductrice (4), laquelle génère une onde électromagnétique lorsque de la lumière est incidente sur une zone sur laquelle le champ électrique est également appliqué. Les électrodes sont disposées sur une surface frontale et une surface arrière de la couche mince semiconductrice (4) laquelle est intercalée entre elles.
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