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1. WO2006011606 - MATERIAL FOR FORMATION OF RESIST PROTECTION FILM AND METHOD OF FORMING RESIST PATTERN THEREWITH

Publication Number WO/2006/011606
Publication Date 02.02.2006
International Application No. PCT/JP2005/013975
International Filing Date 29.07.2005
IPC
G03F 7/11 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
11having cover layers or intermediate layers, e.g. subbing layers
G03F 7/039 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
G03F 7/20 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G03F 7/38 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
38Treatment before imagewise removal, e.g. prebaking
H01L 21/027 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
CPC
G03F 7/11
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
11having cover layers or intermediate layers, e.g. subbing layers
G03F 7/2041
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
2041in the presence of a fluid, e.g. immersion; using fluid cooling means
G03F 7/70341
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70216Systems for imaging mask onto workpiece
70341Immersion
Applicants
  • 東京応化工業株式会社 TOKYO OHKA KOGYO CO., LTD. [JP]/[JP] (AllExceptUS)
  • 遠藤 浩太朗 ENDO, Kotaro [JP]/[JP] (UsOnly)
  • 吉田 正昭 YOSHIDA, Masaaki [JP]/[JP] (UsOnly)
  • 石塚 啓太 ISHIZUKA, Keita [JP]/[JP] (UsOnly)
Inventors
  • 遠藤 浩太朗 ENDO, Kotaro
  • 吉田 正昭 YOSHIDA, Masaaki
  • 石塚 啓太 ISHIZUKA, Keita
Agents
  • SHOBAYASHI, Masayuki
Priority Data
2004-22481030.07.2004JP
2004-22869504.08.2004JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) MATERIAL FOR FORMATION OF RESIST PROTECTION FILM AND METHOD OF FORMING RESIST PATTERN THEREWITH
(FR) MATIERE DE FORMATION D’UNE PELLICULE DE PROTECTION DE RESIST ET PROCEDE DE FORMATION D’UN MOTIF DE RESIST A L’AIDE DE CELLE-CI
(JA) レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
Abstract
(EN) In a liquid immersion exposure process, it is intended to realize formation of a high-resolution resist pattern by the use of liquid immersion exposure without causing any increase of the number of treatment steps while simultaneously preventing the deterioration of resist film during liquid immersion exposure using various immersion liquids, such as water, and the deterioration of immersion liquid used. Further, ensuring applicability to a liquid immersion medium of higher refractive index, simultaneous employment with such a liquid immersion medium of higher refractive index would realize higher enhancement of pattern precision. A protection film is formed on the surface of employed resist film with the use of a composition comprising an acrylic resin component with the properties of having substantially no compatibility with a liquid for resist film immersion, especially water, and being soluble in alkali.
(FR) Dans un processus d’exposition par immersion dans un liquide, l’invention consiste à former un motif de résist à haute résolution grâce à une exposition par immersion dans un liquide, sans qu’il soit nécessaire d’augmenter le nombre d’étapes de traitement, et en évitant simultanément la détérioration de la pellicule de résist durant l’exposition par immersion dans un liquide en utilisant divers liquides d’immersion, notamment l’eau, ainsi que la détérioration du liquide d’immersion utilisé. Par ailleurs, en permettant l’application à un milieu d’immersion dans un liquide d’indice de réfraction plus élevé, une utilisation conjointe avec ce milieu d’immersion dans un liquide d’indice de réfraction plus élevé permet de renforcer la précision du motif. Une pellicule de protection est formée à la surface de la pellicule de résist utilisé à l’aide d’une composition comprenant un composant de résine acrylique dont les propriétés sont de ne présenter essentiellement aucune compatibilité avec un liquide d’immersion de pellicule de résist, notamment l’eau, et d’être soluble dans des alcalis.
(JA)  液浸露光プロセスにおいて、水を始めとした各種浸漬液を用いた液浸露光中のレジスト膜の変質および使用浸漬液の変質を同時に防止し、かつ処理工程数の増加を来すことなく、液浸露光を用いた高解像性レジストパターンの形成を可能とする。さらにより高屈折率な液浸媒体にも適用可能であり、そのような高屈折率液浸媒体との同時使用によりパターン精度のさらなる向上をもたらすことを可能とする。レジスト膜を浸漬させる液体、特に水に対して実質的に相溶性を持たず、かつアルカリに可溶である特性を有するアクリル系樹脂成分を含有してなる組成物を用いて使用するレジスト膜の表面に保護膜を形成する。
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