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Machine translation
1. (WO2006011110) INSULATED GATE FIELD EFFECT TRANSISTORS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/011110    International Application No.:    PCT/IB2005/052388
Publication Date: 02.02.2006 International Filing Date: 18.07.2005
IPC:
H01L 29/78 (2006.01), H01L 29/36 (2006.01), H01L 29/10 (2006.01), H01L 29/08 (2006.01), H01L 29/423 (2006.01)
Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V. [NL/NL]; Groenewoudseweg 1, NL-5621 BA Eindhoven (NL) (For All Designated States Except US).
BROWN, Adam, R. [GB/GB]; (GB) (For US Only)
Inventors: BROWN, Adam, R.; (GB)
Agent: WHITE, Andrew; NXP Semiconductors, Intellectual Property Department, Cross Oak Lane, Redhill, Surrey RH1 5HA (GB)
Priority Data:
0416175.8 20.07.2004 GB
Title (EN) INSULATED GATE FIELD EFFECT TRANSISTORS
(FR) TRANSISTORS A EFFET DE CHAMP A GRILLE ISOLEE
Abstract: front page image
(EN)The invention relates to FETs with stripe cells (6). Some of the cells have alternating low and high threshold regions (10, 8) along their length. In a linear operations regime, the low threshold regions conduct preferentially and increase the current density, thereby reducing the risk of thermal runaway. By distributing the low threshold regions (10) along the length of the cells (6), the risk of current crowding is reduced.
(FR)La présente invention concerne des transistors à effet de champ (FET) présentant des cellules en bandes (6). Certaines cellules présentent sur leur longueur des régions de seuil bas et haut alternées (10, 8). En régime de fonctionnement linéaire, les régions de seuil bas sont de préférence conductrices et augmentent la densité de courant, ce qui permet de réduire le risque de claquage thermique. La répartition de régions de seuil bas (10) sur la longueur des cellules (6) permet de réduire le risque d'excès de courant.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)