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1. (WO2005124846) ORGANIC SILOXANE FILM, SEMICONDUCTOR DEVICE USING SAME, FLAT PANEL DISPLAY AND RAW MATERIAL LIQUID
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/124846    International Application No.:    PCT/JP2005/011129
Publication Date: 29.12.2005 International Filing Date: 17.06.2005
Chapter 2 Demand Filed:    22.06.2005    
IPC:
H01L 21/312 (2006.01), H01L 21/768 (2006.01)
Applicants: Hitachi Chemical Co., Ltd. [JP/JP]; 1-1, Nishi-Shinjuku 2-chome, Shinjuku-ku, Tokyo 1630449 (JP) (For All Designated States Except US).
RYUZAKI, Daisuke [JP/JP]; (JP) (For US Only).
FUKUDA, Hiroshi [JP/JP]; (JP) (For US Only)
Inventors: RYUZAKI, Daisuke; (JP).
FUKUDA, Hiroshi; (JP)
Agent: OGAWA, Katsuo; 8th Floor No. 17 Arai Building 3-3, Shinkawa 1-chome Chuo-ku, Tokyo 104-0033 (JP)
Priority Data:
2004-182357 21.06.2004 JP
Title (EN) ORGANIC SILOXANE FILM, SEMICONDUCTOR DEVICE USING SAME, FLAT PANEL DISPLAY AND RAW MATERIAL LIQUID
(FR) FILM DE SILOXANE ORGANIQUE, DISPOSITIF SEMI-CONDUCTEUR UTILISANT LEDIT FILM, AFFICHAGE À PANNEAU PLAT ET LIQUIDE DE MATIÈRE PREMIÈRE
(JA) 有機シロキサン膜、それを用いた半導体装置、及び、平面表示装置、並びに、原料液
Abstract: front page image
(EN)Disclosed is materials design for prolonging the duration of the low relative dielectric constant of an organic siloxane film having a low relative dielectric constant. Specifically, in an organic siloxane film having a relative dielectric constant of not more than 2.1, the elemental ratio of carbon to silicon in the film is set to not less than 0.10 and not more than 0.55.
(FR)Il est prévu une conception de matériaux pour prolonger la durée de la constante diélectrique relative basse d’un film de siloxane organique ayant une constante diélectrique relative basse. Spécifiquement, dans un film de siloxane organique ayant une constante diélectrique relative ne dépassant pas 2,1, le rapport élémentaire du carbone au silicium dans le film est supérieur ou égal à 0,10 et ne dépasse pas 0,55.
(JA) 比誘電率が低い有機シロキサン膜の比誘電率寿命が長くなる材料設計指針を提供する。  比誘電率が2.1以下の有機シロキサン膜において、膜中のシリコン量に対する炭素量を元素比で0.10以上0.55以下にする。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)