WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2005122293) FORMATION OF ORDERED THIN FILMS OF ORGANICS ON METAL OXIDE SURFACES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/122293    International Application No.:    PCT/US2005/020143
Publication Date: 22.12.2005 International Filing Date: 08.06.2005
Chapter 2 Demand Filed:    05.01.2006    
IPC:
H01L 51/00 (2006.01), H01L 51/05 (2006.01), H01L 51/10 (2006.01), H01L 51/30 (2006.01), H01L 51/40 (2006.01), H01L 51/42 (2006.01), H01L 51/44 (2006.01), H01L 51/46 (2006.01), H01L 51/48 (2006.01), H01L 51/50 (2006.01), H01L 51/52 (2006.01), H01L 51/54 (2006.01), H01L 51/56 (2006.01)
Applicants: PRINCETON UNIVERSITY [US/US]; Office of Technology Licensing and Intellectual Property, New South Building, 4th Floor, P.O. Box 36, Princeton, NJ 08544-0036 (US) (For All Designated States Except US).
HANSON, Eric [US/US]; (US) (For US Only).
SCHWARTZ, Jeffrey [US/US]; (US) (For US Only).
KOCH, Norbert [DE/DE]; (DE) (For US Only).
GUO, Jing [--/--]; (**) (For US Only).
HILL, Ian [CA/CA]; (CA) (For US Only).
Mc DERMOTT, Joe [US/US]; (US) (For US Only)
Inventors: HANSON, Eric; (US).
SCHWARTZ, Jeffrey; (US).
KOCH, Norbert; (DE).
GUO, Jing; (**).
HILL, Ian; (CA).
Mc DERMOTT, Joe; (US)
Agent: NGUYEN, Sam, L.; Heller Ehrman LLP, 275 Middlefield Road, Menlo Park, CA 94025-3506 (US)
Priority Data:
60/577,766 08.06.2004 US
Title (EN) FORMATION OF ORDERED THIN FILMS OF ORGANICS ON METAL OXIDE SURFACES
(FR) FORMATION DE FILMS MINCES ORDONNES D'ELEMENTS ORGANIQUES SUR DES SURFACES D'OXYDE METALLIQUE
Abstract: front page image
(EN)Provided herein is a method for altering an electronic property of a structure comprising an oxide surface or an oxide surface in electronic communication with the structure, the method comprising providing a covalently-bound film comprising at least one organic acid residue on a portion of the oxide surface so that at least one of the following properties of the structure is modified: (a) the charge carrier injection barrier properties; (b) the charge conductivity properties; (c) the charge transport properties; (d) the work function properties; (e) the sub-threshold slope; and (f) the threshold voltage.
(FR)L'invention concerne un procédé permettant de modifier une propriété électronique d'une structure comprenant une surface d'oxyde ou une surface d'oxyde en communication électronique avec la structure, le procédé consistant à utiliser un film lié par covalence et comprenant au moins un résidu d'acide organique sur une partie de la surface d'oxyde, de manière qu'au moins une des propriétés suivantes de la structure soit modifiée: (a) les propriétés de la barrière d'injection de support de la charge; (b) les propriétés de la conductivité de la charge; (c) les propriétés du transport de la charge; (d) les propriétés de la fonction de travail; (e) la pente inférieure au seuil; et (f) la tension seuil.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)