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Machine translation
1. (WO2005122232) HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) MADE OF LAYERS OF GROUP XIII ELEMENT NITRIDES AND MANUFACTURING METHOD THEREOF.
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/122232    International Application No.:    PCT/PL2005/000036
Publication Date: 22.12.2005 International Filing Date: 10.06.2005
Chapter 2 Demand Filed:    09.01.2006    
IPC:
H01L 21/335 (2006.01), H01L 29/778 (2006.01)
Applicants: AMMONO Sp. z o.o. [PL/PL]; Czerwonego Krzyza 2/31, PL-00-377 Warszawa (PL) (For All Designated States Except US).
DWILINSKI, Robert [PL/PL]; (PL) (For US Only).
DORADZINSKI, Roman [PL/PL]; (PL) (For US Only).
GARCZYNSKI, Jerzy [PL/PL]; (PL) (For US Only).
SIERZPUTOWSKI, Leszek, P. [PL/PL]; (US) (For US Only).
KANBARA, Yasuo [JP/JP]; (PL) (For US Only)
Inventors: DWILINSKI, Robert; (PL).
DORADZINSKI, Roman; (PL).
GARCZYNSKI, Jerzy; (PL).
SIERZPUTOWSKI, Leszek, P.; (US).
KANBARA, Yasuo; (PL)
Priority Data:
P-368483 11.06.2004 PL
P-368781 25.06.2004 PL
P-372746 11.02.2005 PL
Title (EN) HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) MADE OF LAYERS OF GROUP XIII ELEMENT NITRIDES AND MANUFACTURING METHOD THEREOF.
(FR) TRANSISTOR A HAUTE MOBILITE D'ELECTRONS (HEMT) CONSTITUE DE COUCHES DE NITRURES D'ELEMENTS DU GROUPE XIII, ET PROCEDE DE FABRICATION DUDIT TRANSISTOR
Abstract: front page image
(EN)The invention relates to a new High Electron Mobility Transistor (HEMT), made essentially of layers of Group XIII element(s) nitride(s). Contrary to currently available transistors of this type, the transistor according to the invention is produced on a homosubstrate (11) made of gallium-containing nitride, has no nucleation layer and its buffer layer (3) is remarkably thinner than in known HEMTs. Preferably, at least the buffer layer (3), being a part of the transistor according to the present invention, is produced by epitaxial methods and the direction of growth of said layer in an epitaxial process is essentially perpendicular to the direction of growth of the substrate (11). The invention relates also to a method of manufacturing of High Electron Mobility Transistor (HEMT).
(FR)L'invention concerne un nouveau transistor à haute mobilité d'électrons (HEMT) constitué principalement de couches de nitrure(s) d'élément(s) du groupe XIII. A la différence des transistors actuels de ce type, le transistor de l'invention est réalisé sur un homosubstrat (11) constitué de nitrure contenant du gallium; est exempt de couche de nucléation; et sa couche tampon (3) est remarquablement plus mince que celle des HEMT connus. De préférence, au moins la couche tampon (3), qui est partie intégrante du transistor de l'invention, est réalisée par des procédés de croissance épitaxiale et le sens de la croissance de la couche, lors d'un processus épitaxial, est essentiellement perpendiculaire au sens de la croissance du substrat (11). L'invention concerne en outre un procédé de fabrication du transistor à haute mobilité d'électrons (HEMT).
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)