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1. (WO2005122224) IMPROVED DUAL DAMASCENE INTEGRATION STRUCTURES AND METHOD OF FORMING IMPROVED DUAL DAMASCENE INTEGRATION STRUCTURES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/122224    International Application No.:    PCT/US2005/019316
Publication Date: 22.12.2005 International Filing Date: 02.06.2005
IPC:
H01L 21/302 (2006.01)
Applicants: EPION CORPORATION [US/US]; 37 Manning Road, Billerica, MA 01821 (US) (For All Designated States Except US).
GEFFKEN, Robert, M. [US/US]; (US) (For US Only).
HAUTALA, John, J. [US/US]; (US) (For US Only)
Inventors: GEFFKEN, Robert, M.; (US).
HAUTALA, John, J.; (US)
Agent: COHEN, Jerry; Burns & Levinson LLP, 125 Summer Street, Boston, MA 02110 (US)
Priority Data:
60/576,439 03.06.2004 US
Title (EN) IMPROVED DUAL DAMASCENE INTEGRATION STRUCTURES AND METHOD OF FORMING IMPROVED DUAL DAMASCENE INTEGRATION STRUCTURES
(FR) STRUCTURES AMELIOREES DOUBLES D'INTEGRATION EN DAMASCENE ET PROCEDE DE FORMATION DESDITES STRUCTURES
Abstract: front page image
(EN)Methods for forming a dual damascene dielectric structure in a porous ultra-low-k (ULK) dielectric material (504) by using gas- cluster ion-beam processing are disclosed. These methods minimize hard-mask layers during dual damascene ULK processing and eliminate hard-masks in the final ULK dual damascene structure. Methods for gas-cluster ion-beam etching, densification, pore sealing and ashing are described that allow simultaneous removal of material and densification of the ULK interfaces. A novel UL dual damascene structure (512) is disclosed with densified interfaces and no hard-masks.
(FR)L'invention concerne des procédés permettant de former une structure diélectrique double en damascène dans une matière poreuse à diélectrique k ultra faible au moyen d'un traitement par faisceau ionique d'agrégat gazeux. Ces procédés permettent de minimiser des couches de masque dur pendant le traitement à diélectrique k ultra faible et d'éliminer des masques durs dans la structure finale double en damascène à diélectrique k ultra faible. Cette invention a aussi pour objet des procédés de gravure ionique d'agrégat gazeux, de densification, de scellement poreux et d'incinération qui permettent simultanément l'élimination de la matière et la densification des interfaces à diélectrique k ultra faible. Ladite invention a enfin trait à une structure double en damascène à diélectrique k ultra faible qui possède des interfaces densifiées et pas masque dur.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)