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Machine translation
1. (WO2005120136) LARGE-AREA ELECTROLUMINESCENT LIGHT-EMITTING DEVICES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/120136    International Application No.:    PCT/US2005/018438
Publication Date: 15.12.2005 International Filing Date: 25.05.2005
IPC:
B05D 5/12 (2006.01), C08F 2/46 (2006.01), C08F 2/54 (2006.01), A41H 37/00 (2006.01), A41H 19/00 (2006.01), B05D 3/00 (2006.01), B05D 3/06 (2006.01), C08J 7/18 (2006.01), G21H 5/00 (2006.01)
Applicants: SIGMA LABORATORIES OF ARIZONA, INC. [US/US]; 10960 N. Stallard Place, Tucson, AZ 85737 (US) (For All Designated States Except US).
MIKHAEL, Michael, G. [US/US]; (US) (For US Only).
YIALIZIS, Angelo [US/US]; (US) (For US Only)
Inventors: MIKHAEL, Michael, G.; (US).
YIALIZIS, Angelo; (US)
Agent: DURANDO, Antonio, R.; Quarles & Brady Streich Lang LLP, One South Church Avenue, Suite 1700, Tucson, AZ 85701 (US)
Priority Data:
60/574,967 27.05.2004 US
Title (EN) LARGE-AREA ELECTROLUMINESCENT LIGHT-EMITTING DEVICES
(FR) DISPOSITIFS ELECTROLUMINESCENTS DE LONGUE PORTEE
Abstract: front page image
(EN)An electroluminescent light-emitting device is manufactured in a semi-continuous process (80, 40, 64) using vapor deposition technology to reduce the thickness of the dielectric layers (72, 52). The phosphor (34), dielectric (52) and electrode (58) layers are deposited sequentially on a flexible web substrate (30), preferably PET (14) coated with conductive ITO (12), which is passed through the deposition sections (74, 32, 54, 82, 84) on a continuous basis. By depositing the dielectric layers in vacuum (50), very thin layers are possible, which yields increased transparency and electrical capacitance. Accordingly the resulting multi-layer structure is suitable for the manufacture of large-area EL devices.
(FR)L'invention concerne un dispositif électroluminescent fabriqué au cours d'un processus semi-continu (80, 40, 64) à l'aide d'une méthode de métallisation par évaporation sous vide réduisant l'épaisseur des couches diélectriques (72, 52). Les couches de phosphore (34), diélectrique (52) et d'électrode (58) sont déposées de manière séquentielle sur un substrat (30) à bande flexible, de préférence un PET (14) à revêtement ITO conducteur (12), passant dans les sections (74, 32, 54, 82, 84) de dépôt de façon continue. Le dépôt des couches diélectriques sous vide (50) permet l'obtention de couches très fines, permettant d'obtenir une transparence et une capacité électrique supérieures. La structure multicouche ainsi obtenue est adaptée pour la fabrication de dispositifs électroluminescents de longue portée.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)