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Machine translation
1. (WO2005117123) SOI SUBSTRATE AND METHOD FOR PRODUCING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2005/117123 International Application No.: PCT/JP2005/009565
Publication Date: 08.12.2005 International Filing Date: 25.05.2005
IPC:
H01L 27/12 (2006.01) ,H01L 21/02 (2006.01) ,H01L 21/3065 (2006.01)
Applicants: MORITA, Etsurou[JP/JP]; JP (UsOnly)
SANO, Ritarou[JP/JP]; JP (UsOnly)
ENDO, Akihiko[JP/JP]; JP (UsOnly)
SUMCO CORPORATION[JP/JP]; 2-1, Shibaura 1-chome, Minato-ku, Tokyo 1058634, JP (AllExceptUS)
Inventors: MORITA, Etsurou; JP
SANO, Ritarou; JP
ENDO, Akihiko; JP
Agent: SHIGA, Masatake; 2-3-1, Yaesu, Chuo-ku, Tokyo 1048453, JP
Priority Data:
2004-15939828.05.2004JP
Title (EN) SOI SUBSTRATE AND METHOD FOR PRODUCING SAME
(FR) SUBSTRAT SOI ET PROCÉDÉ DE FABRICATION DUDIT SUBSTRAT
(JA) SOI基板及びその製造方法
Abstract: front page image
(EN) Disclosed is an SOI substrate comprising a supporting substrate composed of a semiconductor single crystal and an active layer composed of a semiconductor single crystal which is bonded onto the supporting substrate via an oxide film. By forming the oxide film only on the active layer and etching the surface of the active layer selectively using reactive radicals produced by plasma etching, the active layer is formed to have a thickness of 10-200 nm and the thickness difference in the entire active layer is set not more than 1.5 nm.
(FR) Il est prévu un substrat SOI comprenant un substrat de support composé d’un simple cristal semi-conducteur et une couche active composée d’un simple cristal semi-conducteur accrochée sur le substrat de support par le biais d’un film d’oxyde. En formant le film d’oxyde seulement sur la couche active et en attaquant chimiquement la surface de la couche active en utilisant de manière sélective des radicaux réactifs produits par attaque chimique de plasma, la couche active est formée pour avoir une épaisseur comprise entre 10 et 200 nm et la différence d’épaisseur dans la couche active toute entière ne va pas dépasser 1,5 nm.
(JA)  このSOI基板は、半導体単結晶からなる支持基板と、前記支持基板上に酸化膜を介して貼合せられる半導体単結晶からなる活性層とを備え、前記酸化膜が前記活性層にのみ形成され、プラズマエッチング法で生成した反応性ラジカルのみを選択的に用いて前記活性層表面をエッチングすることにより、前記活性層の厚さが10~200nmの範囲に形成されかつ前記活性層全体における膜厚の差が1.5nm以下に形成されている。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)