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Machine translation
1. (WO2005117090) INTEGRATED CIRCUIT WITH IMPURITY BARRIER
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/117090    International Application No.:    PCT/US2005/014801
Publication Date: 08.12.2005 International Filing Date: 28.04.2005
IPC:
H01L 21/322 (2006.01), H01L 21/762 (2006.01)
Applicants: ANALOG DEVICES, INC. [US/US]; One Technology Way, Norwood, MA 02062-9106 (US) (For All Designated States Except US).
WEIGOLD, Jason, W. [US/US]; (US) (For US Only).
CHEN, Thomas, D. [US/US]; (US) (For US Only).
O'KANE, Denis, Mel [IE/US]; (US) (For US Only).
LEVEUGLE, Claire, N. [FR/IE]; (IE) (For US Only).
BROWN, Stephen, Alan [GB/GB]; (GB) (For US Only).
NEVIN, William, A. [GB/GB]; (GB) (For US Only)
Inventors: WEIGOLD, Jason, W.; (US).
CHEN, Thomas, D.; (US).
O'KANE, Denis, Mel; (US).
LEVEUGLE, Claire, N.; (IE).
BROWN, Stephen, Alan; (GB).
NEVIN, William, A.; (GB)
Agent: SUNSTEIN, Bruce, D.; Bromberg & Sunstein LLP, 125 Summer Street, Boston, MA 02110-1618 (US)
Priority Data:
60/571,724 17.05.2004 US
11/044,612 27.01.2005 US
Title (EN) INTEGRATED CIRCUIT WITH IMPURITY BARRIER
(FR) CIRCUIT INTEGRE DOTE D'UNE BARRIERE CONTRE LES IMPURETES
Abstract: front page image
(EN)An integrated circuit with an interface between a semiconductor layer (having a selected region) and a second layer has a barrier with a gettering effect that 1) substantially circumscribes the selected region and 2) extends to the interface. Despite the fact that its gettering effect extends to the interface, the barrier does not penetrate the second layer.
(FR)La présente invention se rapporte à un circuit intégré possédant une interface entre une couche semi-conductrice (comportant une région sélectionnée) et une seconde couche, ledit circuit comportant une barrière qui présente un effet getter qui (1) circonscrit sensiblement la région sélectionnée, et (2) s'étend jusqu'à l'interface. Bien que l'effet getter s'étende jusqu'à l'interface, la barrière ne pénètre pas dans la seconde couche.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)