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Pub. No.:    WO/2005/117086    International Application No.:    PCT/US2005/016606
Publication Date: 08.12.2005 International Filing Date: 12.05.2005
H01L 21/314 (2006.01), H01L 21/316 (2006.01), H01L 21/28 (2006.01)
Applicants: APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Ave, Santa Clara, CA 95054 (US) (For All Designated States Except US).
OLSEN, Christopher [US/US]; (US) (For US Only).
NARWANKAR, Pravin, K. [IN/US]; (US) (For US Only).
KHER, Shreyas, S. [US/US]; (US) (For US Only).
THAKUR, Randhir [US/US]; (US) (For US Only).
MUTHUKRISHNAN, Shankar [US/US]; (US) (For US Only).
KRAUS, Philip, A. [US/US]; (US) (For US Only)
Inventors: OLSEN, Christopher; (US).
NARWANKAR, Pravin, K.; (US).
KHER, Shreyas, S.; (US).
THAKUR, Randhir; (US).
KRAUS, Philip, A.; (US)
Agent: PATTERSON, B., Todd; Moser, Patterson & Sheridan, LLP, 3040 Post Oak Blvd., Suite 1500, Houston, TX 77056-6582 (US)
Priority Data:
10/851,514 21.05.2004 US
Abstract: front page image
(EN)Embodiments of the invention provide methods for forming a dielectric stack by exposing a substrate to a sequence of deposition, nitridation and annealing processes. In one example, a method includes exposing the substrate to a deposition process to form a dielectric layer thereon, exposing the substrate to a nitridation process to form a nitride layer thereon, exposing the substrate to an annealing process and exposing the substrate sequentially to the deposition and nitridation processes while periodically and intermediately exposing the substrate to the annealing process to form a dielectric material having a predetermined thickness. Generally, a nitrogen plasma is used during the nitridation process to form a nitrogen concentration within a range from about 5 atomic percent (at%) to about 25 at%. The dielectric layers usually contain oxygen and at least one additional element, such as hafnium, tantalum, titanium, aluminum, zirconium, lanthanum, silicon or combinations thereof.
(FR)Sous différentes variantes, l'invention concerne des procédés de formation de pile diélectrique par exposition de substrat à une suite d'opérations de dépôt, de nitruration et de recuit. Par exemple, on expose le substrat à un dépôt pour la formation de couche diélectrique, à une nitruration pour la formation du couche de nitrure, à un recuit et on expose le substrat séquentiellement au dépôt et à la nitruration avec exposition périodique et intermédiaire au recuit pour la formation de matériau diélectrique d'épaisseur préétablie. En règle générale, on utilise un plasma à l'azote durant la nitruration pour la formation d'une concentration d'azote comprise entre environ 5 % et environ 25 % en pourcentage atomique. Les couches diélectriques comprennent généralement: oxygène et au moins un élément supplémentaire du type hafnium, tantale, titane, aluminium, zirconium, lanthane, silicium ou combinaisons correspondantes.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)