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1. (WO2005116304) IN SITU DOPED EPITAXIAL FILMS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2005/116304 International Application No.: PCT/US2005/013674
Publication Date: 08.12.2005 International Filing Date: 21.04.2005
IPC:
H01L 21/20 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
Applicants:
ASM AMERICA, INC. [US/US]; 3440 Esat University Drive Phoenix, Arizona 85034-7200, US (AllExceptUS)
Inventors:
BAUER, Matthias; DE
Agent:
DELANEY, Karoline, A.; Knobbe, Martens, Olson & Bear, LLP 2040 Main Street, 14th Floor Irvine, California 92614, US
Priority Data:
60/565,03323.04.2004US
60/565,90927.04.2004US
Title (EN) IN SITU DOPED EPITAXIAL FILMS
(FR) FILMS EPITAXIAUX DOPES IN SITU
Abstract:
(EN) A method for depositing an in situ doped epitaxial semiconductor layer comprises maintaining a pressure of greater than about 80 torr in a process chamber housing a patterned substrate. The method further comprises providing a flow of dichlorosilane to the process chamber. The method further comprises providing a flow of a dopant hydride to the process chamber. The method further comprises selectively depositing the epitaxial semiconductor layer on single crystal material on the patterned substrate at a rate of greater than about 3 nm min-1.
(FR) Procédé de dépôt <i>in situ</i> d'une couche de semi-conductrice épitaxiale dopée consistant à maintenir une pression supérieure à quelque 80 torr dans une chambre de traitement qui renferme un substrat à motifs. Le procédé consiste également à introduire un flux de dichlorosilane dans la chambre de traitement ainsi qu'un flux d'hydride dopant. Suit un dépôt sélectif d'une couche semi-conductrice épitaxiale sur un matériau monocristallin du substrat à motifs à un débit supérieur à 3 3 nm mn-1 environ.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
KR1020070006852EP1738001JP2007535147