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1. (WO2005114748) PLASMON ENHANCED SENSITIZED PHOTOVOLTAIC CELLS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2005/114748 International Application No.: PCT/US2005/012523
Publication Date: 01.12.2005 International Filing Date: 13.04.2005
IPC:
H01L 31/00 (2006.01) ,H01L 31/0352 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0352
characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
Applicants:
SOLARIS NANOSCIENCES, INC. [US/US]; 321 South Main Street Providence, RI 02903, US (AllExceptUS)
LAWANDY, Nabil, M. [US/US]; US (UsOnly)
Inventors:
LAWANDY, Nabil, M.; US
Agent:
SNOW, Jeffrey, L. ; Kirkpatrick & Lockhart Nicholson Graham LLP State Street Financial Center One Lincoln Street Boston, MA 02111-2950, US
Priority Data:
60/561,86713.04.2004US
60/602,41118.08.2004US
Title (EN) PLASMON ENHANCED SENSITIZED PHOTOVOLTAIC CELLS
(FR) CELLULE PHOTOVOLTAIQUE SENSIBILISEE RENFORCEE EN PLASMONS
Abstract:
(EN) A plasmon enhanced particle for use in a photovoltaic cell. The particle includes a nanostructure capable of plasmon resonance; a charge accepting semiconductor in conjunction with the nanostructure; and a sensitizer coating the charge accepting semiconductor. Another aspect the invention relates to a plasmon enhanced solar photovoltaic cell. The solar photovoltaic cell includes a plurality of nanoparticles capable of plasmon resonance; a plurality of nanoparticles of charge accepting semiconductor in conjunction with the nanoparticles capable of plasmon resonance; and a coating of sensitizer on the plurality of nanoparticles of charge accepting semiconductor. Another aspect relates to a method of making a plasmon enhanced material suitable for use in a photovoltaic cell. The steps include providing a nanostructure capable of plasmon resonance; providing a charge accepting semiconductor in conjunction with the nanostructure; sintering the charge accepting semiconductor such as metal oxide; and coating the charge accepting semiconductor with sensitizer.
(FR) L'invention porte sur une particule renforcée en plasmons s'utilisant dans des cellules photovoltaïques. Une telle particule présente: une nanostructure capable de résonance plasmonique; un semi-conducteur accepteur de charge en conjonction avec la nanostructure; et un revêtement de sensibilisant recouvrant le semi-conducteur. Un autre aspect de l'invention porte sur une cellule photovoltaïque solaire renforcée en plasmons comportant: plusieurs nanoparticules capables de résonance plasmonique; plusieurs nanoparticules de semi-conducteur accepteur de charge avec les nanoparticules capables de résonance plasmonique; et un revêtement de sensibilisant recouvrant les nanoparticules de semi-conducteur accepteur de charge. Un autre aspect de l'invention porte sur un procédé d'élaboration d'un matériau renforcé en plasmons utilisable dans une cellule voltaïque. Les étapes consistent à obtenir une nanostructure capable de résonance plasmonique; obtenir un semi-conducteur accepteur de charges en conjonction avec la nanostructure; à fritter ledit semi-conducteur comme un oxyde métallique; et à revêtir ledit semi-conducteur d'un sensibilisant.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)