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Machine translation
1. (WO2005109142) FAST LOW DROP OUT (LDO) PFET REGULATOR CIRCUIT
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/109142    International Application No.:    PCT/CA2005/000514
Publication Date: 17.11.2005 International Filing Date: 05.04.2005
IPC:
G05F 1/56 (2006.01), G05F 3/16 (2006.01)
Applicants: SIGE SEMICONDUCTOR (U.S.), CORP. [CA/CA]; 1 Griffin Brook Drive, Suite 201, Methuen, MA 01844 (CA) (For All Designated States Except US).
WHITTAKER, Edward, J., W. [GB/GB]; (GB) (For US Only)
Inventors: WHITTAKER, Edward, J., W.; (GB)
Agent: FREEDMAN, Gordon; Freedman & Associates, 117 Centrepointe Drive, Suite 350, Nepean, Ontario K2G 5X3 (CA)
Priority Data:
10/840,613 07.05.2004 US
Title (EN) FAST LOW DROP OUT (LDO) PFET REGULATOR CIRCUIT
(FR) CIRCUIT DE REGULATION DE PFET RAPIDE A FAIBLE CHUTE DE TENSION (LDO)
Abstract: front page image
(EN)A low dropout (LDO) PFET regulator circuit is disclosed for operating in two modes of operation. For higher supply voltage potentials the LDO PFET regulator circuit operates normally, as supply voltage potential drops, the LDO PFET regulator operates in a second mode of operation where a decision circuit determines whether to supply a first boost current thereto in order to compensate for the reduced transimpedance of the first PFET.
(FR)La présente invention concerne un circuit de régulation à faible chute de tension (low dropout / LDO) qui peut fonctionner dans deux modes de fonctionnement. Pour des potentiels de tension d'alimentation supérieurs, le circuit de régulation de PFET LDO fonctionne normalement. Lorsque le potentiel de tension d'alimentation chute, le régulateur de PFET LDO fonctionne dans un second mode de fonctionnement, un circuit de décision déterminant si un premier courant d'amplification doit être fourni afin de compenser la transimpédance réduite du premier PFET.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)