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1. (WO2005108468) METHOD FOR FORMING ORGANIC SILICA FILM, ORGANIC SILICA FILM, WIRING STRUCTURE, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FILM FORMATION
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/108468    International Application No.:    PCT/JP2005/008223
Publication Date: 17.11.2005 International Filing Date: 28.04.2005
IPC:
C08G 77/42 (2006.01), C08G 77/50 (2006.01), C08L 83/14 (2006.01), C09D 183/14 (2006.01), H01B 3/46 (2006.01), H01L 21/312 (2006.01)
Applicants: JSR CORPORATION [JP/JP]; 6-10, Tsukiji 5-chome, Chuo-ku, Tokyo 1048410 (JP) (For All Designated States Except US).
AKIYAMA, Masahiro [JP/JP]; (JP) (For US Only).
NAKAGAWA, Hisashi [JP/JP]; (JP) (For US Only).
YAMANAKA, Tatsuya [JP/JP]; (JP) (For US Only).
SHIOTA, Atsushi [JP/JP]; (JP) (For US Only).
KUROSAWA, Takahiko [JP/JP]; (JP) (For US Only)
Inventors: AKIYAMA, Masahiro; (JP).
NAKAGAWA, Hisashi; (JP).
YAMANAKA, Tatsuya; (JP).
SHIOTA, Atsushi; (JP).
KUROSAWA, Takahiko; (JP)
Agent: OFUCHI, Michie; 2nd Floor, Ogikubo TM Bldg. 26-13, Ogikubo 5-chome Suginami-ku, Tokyo 167-0051 (JP)
Priority Data:
2004-141200 11.05.2004 JP
2005-050590 25.02.2005 JP
Title (EN) METHOD FOR FORMING ORGANIC SILICA FILM, ORGANIC SILICA FILM, WIRING STRUCTURE, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FILM FORMATION
(FR) PROCÉDÉ D’ÉLABORATION DE FILM DE SILICE ORGANIQUE, FILM DE SILICE ORGANIQUE, STRUCTURE DE CABLAGE, DISPOSITIF SEMI-CONDUCTEUR, ET COMPOSITION POUR FORMATION DE FILM
(JA) 有機シリカ系膜の形成方法、有機シリカ系膜、配線構造体、半導体装置、および膜形成用組成物
Abstract: front page image
(EN)Disclosed is a method for forming an organic silica film which comprises a step wherein a coating film composed of a silicon compound having an -Si-O-Si- structure and an -Si-CH2-Si- structure is formed on a base, a step for heating the coating film, and a step for curing the coating film through irradiation of ultraviolet light.
(FR)Il est prévu un procédé d'élaboration de film d’un silice organique comprenant une phase dans laquelle un film de revêtement constitué d'un composé de silicium ayant une structure -Si-O-Si- et une structure -Si-CH2-Si- est formé sur une base, une phase de chauffage du film de revêtement, et une phase de cuisson du film de revêtement par irradiation de lumière ultraviolette.
(JA)  本発明の有機シリカ系膜の形成方法は、-Si-O-Si-構造および-Si-CH-Si-構造を有するケイ素化合物からなる塗膜を基材上に形成する工程と、前記塗膜を加熱する工程と、前記塗膜に紫外線を照射して硬化処理を行なう工程と、を含む。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)