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Machine translation
1. (WO2005108000) A METHOD OF LASER ETCHING A STRUCTURE BY FIRST RADIATING AREAS OF THE STRUCTURE FOR ALTERING THE CRYSTALLINITY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/108000    International Application No.:    PCT/US2005/013180
Publication Date: 17.11.2005 International Filing Date: 18.04.2005
Chapter 2 Demand Filed:    27.02.2006    
IPC:
B01J 19/12 (2006.01), B23K 26/40 (2006.01), B23K 26/42 (2006.01), C23F 4/00 (2006.01), H01L 21/268 (2006.01)
Applicants: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. [US/US]; Hewlett-Packard Company, Intellectual Property Administration, 20555 S.H. 249, Houston, Texas 77070 (US) (For All Designated States Except US).
NELSON, Curt [US/US]; (US) (For US Only).
LONG, Greg [US/US]; (US) (For US Only)
Inventors: NELSON, Curt; (US).
LONG, Greg; (US)
Agent: COULMAN, Donald J.; Hewlett-Packard Company, Intellectual Property Administration, P.O. Box 272400, Mail Stop 35, Fort Collins, Colorado 80527-2400 (US).
POWELL, Stephen, David; Williams Powell, Morley House, 26-30 Holborn Viaduct, London EC1A 2BP (GB)
Priority Data:
10/832,640 26.04.2004 US
Title (EN) A METHOD OF LASER ETCHING A STRUCTURE BY FIRST RADIATING AREAS OF THE STRUCTURE FOR ALTERING THE CRYSTALLINITY
(FR) PROCEDE DE GRAVURE LASER D'UNE STRUCTURE COMMENÇANT PAR L'IRRADIATION DE ZONES DE CETTE STRUCTURE AFIN D'EN MODIFIER LA CRISTALLINITE
Abstract: front page image
(EN)An etching method (10) includes applying a first electromagnetic radiation (24) to an area (42) of structure (40), thereby altering a characteristic of the structure (40) in the area (42), and applying a second electromagnetic radiation (34) to the structure (40), the second electromagnetic radiation (34) configured to selectively ablate the structure (40) based on the characteristic, wherein the characteristic, in a preferred embodiment, is crystallinity.
(FR)La présente invention concerne un procédé de gravure (10) qui consiste à appliquer un premier élément électromagnétique (24) sur une zone (42) d'une structure (40), modifiant ainsi une caractéristique de la structure (40) dans cette zone (42) et, à appliquer un second rayonnement électromagnétique (34) configuré de façon à sélectivement ablater la structure (40) à partir de la caractéristique, cette caractéristique étant, dans un mode de réalisation préféré, la cristallinité.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)