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1. (WO2005106936) APPARATUS FOR TREATING SUBSTRATE

Pub. No.:    WO/2005/106936    International Application No.:    PCT/JP2005/008061
Publication Date: Nov 10, 2005 International Filing Date: Apr 27, 2005
IPC: H01L 21/302
H01L 21/3205
Applicants: EBARA CORPORATION
株式会社荏原製作所
FUKUNAGA, Yukio
福永 由紀夫
SUSAKI, Akira
須▲崎▼ 明
KUNISAWA, Junji
國澤 淳次
UEYAMA, Hiroyuki
上山 浩幸
SHIMA, Shouhei
嶋 昇平
FUKUNAGA, Akira
福永 明
TATEISHI, Hideki
立石 秀樹
MINE, Junko
嶺 潤子
Inventors: FUKUNAGA, Yukio
福永 由紀夫
SUSAKI, Akira
須▲崎▼ 明
KUNISAWA, Junji
國澤 淳次
UEYAMA, Hiroyuki
上山 浩幸
SHIMA, Shouhei
嶋 昇平
FUKUNAGA, Akira
福永 明
TATEISHI, Hideki
立石 秀樹
MINE, Junko
嶺 潤子
Title: APPARATUS FOR TREATING SUBSTRATE
Abstract:
An apparatus and a method capable of supplying gases including an evaporated reductive organic compound while strictly controlling the flow rate thereof and treating the surface of a metal on a substrate without deteriorating various films forming a semiconductor device by simple system configuration. The apparatus comprises an airtight treatment chamber (10) storing the substrate (W) therein, an exhaust control system (20) controlling pressure in the treatment chamber (10), and a treatment gas supply system (30) supplying a treatment gas including the reductive organic compound to the treatment chamber (10). The treatment gas supply system (30) further comprises an evaporation container (32) storing a liquid reductive organic compound material therein and having an evaporative liquid level (S), a treatment gas pipe (18) leading the treatment gas including the reductive organic compound evaporated in the evaporation container (32) to the treatment chamber (10), and a restriction element (40) disposed in the treatment gas pipe (18) and controlling the supplied amount of the treatment gas into the treatment chamber (10) by adjusting the opening thereof. The opening of the restriction element (40) is set so that a pressure variation in the evaporation container (32) can be maintained within a specified range.