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Machine translation
1. (WO2005104680) A METHOD OF BASE FORMATION IN A BICMOS PROCESS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/104680    International Application No.:    PCT/US2005/011711
Publication Date: 10.11.2005 International Filing Date: 06.04.2005
IPC:
H01L 31/072 (2006.01)
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road, Armonk, NJ 10504 (US) (For All Designated States Except US).
GEISS, Peter, J. [US/US]; (US) (For US Only).
JOSEPH, Alvin, J. [IN/US]; (US) (For US Only).
LIU, Qzhi [CN/US]; (US) (For US Only).
ORNER, Bradley, A. [US/US]; (US) (For US Only)
Inventors: GEISS, Peter, J.; (US).
JOSEPH, Alvin, J.; (US).
LIU, Qzhi; (US).
ORNER, Bradley, A.; (US)
Agent: CANALE, Anthony, J.; International Business Machines Corporation, Intellectual Property Law--Zip 972E, 1000 River Street, Essex Junction, VT 05452 (US)
Priority Data:
10/709,113 14.04.2004 US
Title (EN) A METHOD OF BASE FORMATION IN A BICMOS PROCESS
(FR) PROCEDE DE FORMATION DE BASE DANS UN PROCESSUS BICMOS
Abstract: front page image
(EN)Disclosed is a bipolar complementary metal oxide semiconductor (BiCMOS) or NPN/PNP device that has a collector (112), an intrinsic base (118) above the collector, shallow trench isolation regions (114) adjacent the collector, a raised extrinsic base (202) above the intrinsic base, a T-shaped emitter (800) above the extrinsic base, spacers (700) adjacent the emitter, and a silicide (400) layer that is separated from the emitter by the spacers.
(FR)L'invention concerne un semi-conducteur complémentaire à l'oxyde de métal bipolaire (BiCMOS) ou un dispositif NPN/PNP, qui comprend: un collecteur (112); une base intrinsèque (118) placée au-dessus du collecteur; des régions isolantes peu profondes (114) jouxtant le collecteur; une base extrinsèque saillante (202) placée au-dessus de la base intrinsèque; un émetteur en forme de T (800) placé au-dessus de la base extrinsèque; des butées d'espacement (700) jouxtant l'émetteur; et une couche de siliciure (400) séparée de l'émetteur par des butées d'espacement.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)