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1. (WO2005104251) N-TYPE GROUP I I I NITRIDE SEMICONDUCTOR LAYERED STRUCTURE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/104251    International Application No.:    PCT/JP2005/008461
Publication Date: 03.11.2005 International Filing Date: 27.04.2005
IPC:
H01L 21/205 (2006.01), H01L 33/02 (2010.01), H01L 33/32 (2010.01), H01L 21/20 (2006.01)
Applicants: SHOWA DENKO K.K. [JP/JP]; 13-9, Shibadaimon 1-chome, Minato-ku, Tokyo, 1058518 (JP) (For All Designated States Except US).
BANDOH, Akira [JP/JP]; (JP) (For US Only).
SAKAI, Hiromitsu [JP/JP]; (JP) (For US Only).
KOBAYAKAWA, Masato [JP/JP]; (JP) (For US Only).
OKUYAMA, Mineo [JP/JP]; (JP) (For US Only).
TOMOZAWA, Hideki [JP/JP]; (JP) (For US Only).
MIKI, Hisayuki [JP/JP]; (JP) (For US Only).
GAZE, Joseph [GH/JP]; (JP) (For US Only).
HORIKAWA, Syunji [JP/JP]; (JP) (For US Only).
SAKURAI, Tetsuo [JP/JP]; (JP) (For US Only)
Inventors: BANDOH, Akira; (JP).
SAKAI, Hiromitsu; (JP).
KOBAYAKAWA, Masato; (JP).
OKUYAMA, Mineo; (JP).
TOMOZAWA, Hideki; (JP).
MIKI, Hisayuki; (JP).
GAZE, Joseph; (JP).
HORIKAWA, Syunji; (JP).
SAKURAI, Tetsuo; (JP)
Agent: AOKI, Atsushi; A. AOKI, ISHIDA & ASSOCIATES, Toranomon 37 Mori Bldg., 5-1, Toranomon 3-chome, Minato-ku, Tokyo 105-8423 (JP)
Priority Data:
2004-131617 27.04.2004 JP
60/570,135 12.05.2004 US
2004-153709 24.05.2004 JP
2004-165406 03.06.2004 JP
2004-193744 30.06.2004 JP
60/585,919 08.07.2004 US
2004-213423 21.07.2004 JP
2005-031374 08.02.2005 JP
Title (EN) N-TYPE GROUP I I I NITRIDE SEMICONDUCTOR LAYERED STRUCTURE
(FR) STRUCTURE STRATIFIÉE SEMI-CONDUCTRICE DE NITRURE DE GROUPE III DE TYPE N
Abstract: front page image
(EN)An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits. The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.
(FR)Un objet de la présente invention est de proposer une structure stratifiée semi-conductrice de nitrure de Groupe III de type n ayant une excellente planéité et quelques trous. La structure stratifiée semi-conductrice de nitrure de Groupe III de type n inventive comprend un substrat et, empilée sur le substrat, une couche de variation périodique de la concentration en impureté de type n comprenant une couche de concentration atomique supérieure en impureté de type n et une couche de concentration atomique inférieure en impureté de type n, ladite couche de concentration inférieure étant empilée sur la couche de concentration supérieure.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)