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Machine translation
1. (WO2005104192) A METHOD FOR THE FABRICATION OF GaAs/Si AND RELATED WAFER BONDED VIRTUAL SUBSTRATES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/104192    International Application No.:    PCT/US2005/013609
Publication Date: 03.11.2005 International Filing Date: 21.04.2005
IPC:
H01L 21/30 (2006.01), H01L 21/46 (2006.01)
Applicants: CALIFORNIA INSTITUTE OF TECHNOLOGY [US/US]; 1200 East California Blvd., MS 201-85, PASADENA, California 91125 (US) (For All Designated States Except US).
ATWATER, Harry A., Jr. [US/US]; (US) (For US Only).
ZAHLER, James [US/US]; (US) (For US Only)
Inventors: ATWATER, Harry A., Jr.; (US).
ZAHLER, James; (US)
Agent: MAEBIUS, Stephen, B.; FOLEY & LARDNER LLP, 3000 K Street, N.W., Suite 500, Washington, District of Columbia 20007-5143 (US)
Priority Data:
60/564,251 21.04.2004 US
Title (EN) A METHOD FOR THE FABRICATION OF GaAs/Si AND RELATED WAFER BONDED VIRTUAL SUBSTRATES
(FR) PROCEDE DE FABRICATION DE SUBSTRATS VIRTUELS LIES A UNE PLAQUETTE DE GAAS/SI ET DE SUBSTRATS VIRTUELS ASSOCIES
Abstract: front page image
(EN)A method of making a virtual substrate includes providing a device substrate (1) of a first material containing a device layer (2) of a second material different from the first material located over a first side of the device substrate, implanting ions (10) into the device substrate such that a damaged region (1b) is formed in the device substrate below the device layer, bonding the device layer to a handle substrate (4), and separating at least a portion of the device substrate from the device layer bonded to the handle substrate along the damaged region to form a virtual substrate comprising the device layer bonded to the handle substrate.
(FR)L'invention concerne un procédé de fabrication d'un substrat virtuel consistant à utiliser un substrat de dispositif constitué d'un premier matériau contenant une couche de dispositif constituée d'un second matériau différent du premier matériau, située sur un premier côté du substrat de dispositif, à implanter des ions dans le substrat de dispositif de sorte qu'une région endommagée soit formée dans le substrat de dispositif sous la couche de dispositif, à lier la couche de dispositif à un substrat de manipulation et à séparer au moins une partie du substrat de dispositif de la couche de dispositif liée au substrat de manipulation le long de la région endommagée afin de former un substrat virtuel comprenant la couche de dispositif liée au substrat de manipulation.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)