Processing

Please wait...

Settings

Settings

Goto Application

1. WO2005099057 - WAFER FOR NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, MANUFACTURING METHOD THEREOF AND NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT OBTAINED FROM THE WAFER

Publication Number WO/2005/099057
Publication Date 20.10.2005
International Application No. PCT/JP2005/003566
International Filing Date 03.03.2005
IPC
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/306 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01S 5/323 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
32comprising PN junctions, e.g. hetero- or double- hetero-structures
323in AIIIBV compounds, e.g. AlGaAs-laser
H01S 5/343 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers , multiple quantum well lasers or graded index separate confinement heterostructure lasers
343in AIIIBV compounds, e.g. AlGaAs-laser
H01S 5/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
CPC
H01L 21/30625
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
H01L 33/0075
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
0075comprising nitride compounds
H01L 33/0093
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0093Wafer bonding; Removal of the growth substrate
H01S 5/0207
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
0206Substrates, e.g. growth, shape, material, removal or bonding;
0207Substrates having a special shape
H01S 5/0217
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
0206Substrates, e.g. growth, shape, material, removal or bonding;
0217Removal of the substrate
H01S 5/32341
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
32comprising PN junctions, e.g. hetero- or double- heterostructures
323in AIIIBV compounds, e.g. AlGaAs-laser, ; InP-based laser
32308emitting light at a wavelength less than 900 nm
32341blue laser based on GaN or GaP
Applicants
  • 日本電気株式会社 NEC CORPORATION [JP]/[JP] (AllExceptUS)
  • 角野 雅芳 SUMINO, Masayoshi [JP]/[JP] (UsOnly)
Inventors
  • 角野 雅芳 SUMINO, Masayoshi
Agents
  • 宮崎 昭夫 MIYAZAKI, Teruo
Priority Data
2004-10790631.03.2004JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) WAFER FOR NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, MANUFACTURING METHOD THEREOF AND NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT OBTAINED FROM THE WAFER
(FR) PLAQUE POUR ÉLÉMENT ÉMETTEUR DE LUMIÈRE DE SEMI-CONDUCTEUR DE NITRURES, MÉTHODE DE FABRICATION DE CELLE-CI ET ÉLÉMENT ÉMETTEUR DE LUMIÈRE DE SEMI-CONDUCTEUR DE NITRURES OBTENU À PARTIR DE LA PLAQUE
(JA) 窒化物半導体発光素子用ウエハとその製造方法およびそのウエハから得られた窒化物半導体発光素子
Abstract
(EN)
A nitride semiconductor light emitting element formed on a crystalline substrate, such as a GaN substrate, an Al2O3 substrate and a ZrB2 substrate, having an element yield of 80% or more and a high reliability, and an element wafer therefor. The wafer for the nitride semiconductor light emitting element is provided by reducing the wafer thickness by polishing the rear plane of the substrate by employing at least chemical mechanical polishing. The wafer for the nitride semiconductor light emitting element has a wafer thickness d of 145μm or less in a direction vertical to the substrate plane and a substrate plane warp curvature radius R of 0.5m or more, or has a polishing strain layer thickness of 5μm or less due to chemical mechanical polishing on the substrate rear plane.
(FR)
Un élément émetteur de lumière de semi-conducteur de nitrures formé sur un substrat cristallin, tel qu'un substrat GaN, un substrat Al2O3 et un substrat ZrB2, ayant une production d'élément de 80% ou plus et une haute fiabilité, ainsi qu'une plaque d'élément pour cela. La plaque destinée à l'élément émetteur de lumière de semi-conducteur des nitrures est fournie par réduction de l'épaisseur de la plaque en polissant le plan arrière du substrat à l'aide d'au moins un poli mécanique chimique. La plaque pour l'élément émetteur de lumière de semi-conducteur de nitrures possède une épaisseur d de 145 µm ou moins dans une direction verticale au plan du substrat et un rayon de courbure du plan du substrat R de 0,5 m ou plus, ou possède une épaisseur de couche de pression de poli de 5 µm ou moins, du fait du poli mécanique chimique sur le plan arrière du substrat.
(JA)
 80%以上の素子歩留まりと高い信頼性を有するGaN基板、Al基板、ZrB2基板などの結晶基板の上に形成された窒化物半導体発光素子およびその素子ウエハを提供する。  本発明は、少なくとも化学機械研磨を用いて基板裏面を研磨することでウエハ厚さを薄くしている窒化物半導体発光素子用ウエハの、基板面に垂直な方向のウエハの厚さdと基板面の反りの曲率半径Rが、曲率半径Rが0.5m以上でウエハの厚さが145μm以下である、あるいは、基板裏面の化学機械研磨による研磨歪み層の厚さが5μm以下であることを特徴する窒化物半導体発光素子用ウエハである。
Also published as
Latest bibliographic data on file with the International Bureau