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1. WO2005098976 - SEMICONDUCTOR LIGHT EMITTING DEVICES INCLUDING A LUMINESCENT CONVERSION ELEMENT AND METHODS FOR PACKAGING THE SAME

Publication Number WO/2005/098976
Publication Date 20.10.2005
International Application No. PCT/US2005/009778
International Filing Date 24.03.2005
Chapter 2 Demand Filed 08.06.2006
IPC
H01L 21/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L 33/50 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
50Wavelength conversion elements
H01L 33/58 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
58Optical field-shaping elements
H01L 33/52 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
52Encapsulations
CPC
H01L 2924/181
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
15Details of package parts other than the semiconductor or other solid state devices to be connected
181Encapsulation
H01L 2933/0041
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0033relating to semiconductor body packages
0041relating to wavelength conversion elements
H01L 33/507
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
50Wavelength conversion elements
507the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
H01L 33/52
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
52Encapsulations
H01L 33/58
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
58Optical field-shaping elements
Applicants
  • CREE, INC. [US]/[US] (AllExceptUS)
  • LEUNG, Michael [US]/[US] (UsOnly)
  • COLEMAN, Thomas G. [US]/[US] (UsOnly)
  • BECERRA, Maryanne [US]/[US] (UsOnly)
Inventors
  • LEUNG, Michael
  • COLEMAN, Thomas G.
  • BECERRA, Maryanne
Agents
  • GLATZ, Robert, W.
Priority Data
11/055,19410.02.2005US
60/558,31431.03.2004US
60/637,70021.12.2004US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR LIGHT EMITTING DEVICES INCLUDING A LUMINESCENT CONVERSION ELEMENT AND METHODS FOR PACKAGING THE SAME
(FR) DISPOSITIFS ELECTROLUMINESCENTS A SEMI-CONDUCTEUR, A ELEMENT DE CONVERSION DE LUMINESCENCE ET METHODES DE CONDITIONNEMENT
Abstract
(EN)
Methods of packaging a semiconductor light emitting device include dispensing a first quantity of encapsulant material into a cavity including the light emitting device. The first quantity of encapsulant material in the cavity is treated to form a hardened upper surface thereof having a selected shape. A luminescent conversion element is provided on the upper surface of the treated first quantity of encapsulant material. The luminescent conversion element includes a wavelength conversion material and has a thickness at a middle region of the cavity greater than proximate a sidewall of the cavity.
(FR)
Les méthodes de conditionnement pour dispositif électroluminescent à semi-conducteurs couvertes par l'invention consistent à verser une première quantité de matériau d'encapsulation dans une cavité qui renferme le dispositif électroluminescente. Cette première quantité de matériau d'encapsulation versée dans la cavité est traitée pour qu'elle forme une surface supérieure durcie d'un forme prédéterminée. Un élément de conversion de luminescence est disposé sur la surface supérieure de la première quantité traité du matériau d'encapsulation. Le matériau de conversion de luminescence renferme un matériau de conversion de longueur d'onde et présente dans une région centrale de la cavité une épaisseur plus importante que contre la paroi latérale de cette même cavité.
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