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1. WO2005096394 - RADIATION DETECTOR

Publication Number WO/2005/096394
Publication Date 13.10.2005
International Application No. PCT/DE2005/000428
International Filing Date 10.03.2005
IPC
H01L 31/0216 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
H01L 31/068 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
CPC
H01L 31/02162
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
02161for devices characterised by at least one potential jump barrier or surface barrier
02162for filtering or shielding light, e.g. multicolour filters for photodetectors
H01L 31/0687
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
0687Multiple junction or tandem solar cells
Y02E 10/544
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
544Solar cells from Group III-V materials
Y02E 10/547
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
547Monocrystalline silicon PV cells
Y02P 70/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
70Climate change mitigation technologies in the production process for final industrial or consumer products
50Manufacturing or production processes characterised by the final manufactured product
Applicants
  • OSRAM OPTO SEMICONDUCTORS GMBH [DE]/[DE] (AllExceptUS)
  • JAEGER, Arndt [DE]/[DE] (UsOnly)
  • STAUSS, Peter [DE]/[DE] (UsOnly)
  • WINDISCH, Reiner [DE]/[DE] (UsOnly)
Inventors
  • JAEGER, Arndt
  • STAUSS, Peter
  • WINDISCH, Reiner
Agents
  • EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH
Priority Data
10 2004 015 931.931.03.2004DE
10 2004 037 020.630.07.2004DE
10 2004 053 317.204.11.2004DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) STRAHLUNGSDETEKTOR
(EN) RADIATION DETECTOR
(FR) DETECTEUR DE RAYONNEMENTS
Abstract
(DE)
Es wird ein Strahlungsdetektor zur Detektion von Strahlung (8) gemäß einer vorgegebenen spektralen Empfindlichkeitsverteilung (9), die ein Maximum bei einer vorgegebenen Wellenlänge &lgr;o aufweist, umfassend einen Halbleiterkörper (1) mit einem der Detektorsignalerzeugung dienenden und zum Strahlungsempfang vorgesehenen aktiven Bereich (5) angegeben, wobei der aktive Bereich (5) gemäß einer Ausführungsform eine Mehrzahl von Funktionsschichten (4a, 4b, 4c, 4d) umfasst, die unterschiedliche Bandlücken und/oder Dicken aufweisen und derart ausgebildet sind, dass sie (4a, 4b, 4c, 4d) zumindest teilweise Strahlung in einem Wellenlängenbereich größer als &lgr;0 absorbieren. Gemäß einer weiteren Ausführungsform ist dem aktiven Bereich eine Filterschichtstruktur (70) nachgeordnet, die zumindest eine Filterschicht (7, 7a, 7b, 7c) umfasst, wobei die Filterschichtstruktur die kurzwellige Seite (101) der Detektorempfindlichkeit (10) gemäß der vorgegebenen spektralen Empfindlichkeitsverteilung (9) durch Absorption von Wellenlängen kleiner als &lgr;o bestimmt. Weiterhin wird ein Strahlungsdetektor zur Detektion von Strahlung (8) gemäß der spektralen Empfindlichkeitsverteilung (9) des menschlichen Auges angegeben. Der Halbleiterkörper kann monolithisch integriert sein.
(EN)
A radiation detector is disclosed, for the detection of radiation (8), with a given spectral sensitivity distribution (9), which has a maximum at a given wavelength &lgr;o, comprising a semiconductor body (1) with an active region (5), provided for detector signal generation and for the incident radiation. In one embodiment, the active region (5) comprises a number of functional layers (4a, 4b, 4c, 4d), with differing band gaps and/or thicknesses and embodied such that said layers (4a, 4b, 4c, 4d) at least partly absorb radiation at a wavelength greater than &lgr;o. In a further embodiment, a filter layer structure (70) is arranged after the active region, comprising at least one filter layer (7, 7a, 7b, 7c). The filter layer structure determines the short wave side (101) of the detector sensitivity (10), according to the given spectral sensitivity distribution (9), by means of absorption of wavelengths less than &lgr;o. A radiation detector for the detection of radiation (8), according to the spectral sensitivity distribution (9) of the human eye is also disclosed. The semiconductor body can be monolithically integrated.
(FR)
Détecteur de rayonnements pour la détection de rayonnements (8) selon une répartition de sensibilité spectrale prédéterminée (9) qui présente un maximum à une longueur d'onde prédéterminée $g(l)0. Ledit détecteur comporte un corps semi-conducteur (1) pourvu d'une zone active (5) servant à la production de signaux de détection et conçue pour recevoir des rayonnements, cette zone active (5) comportant, selon un mode de réalisation, une pluralité de couches fonctionnelles (4a, 4b, 4c, 4d) présentant des bandes interdites et / ou épaisseurs différentes et conçues de manière telle qu'elles (4a, 4b, 4c, 4d) absorbent au moins partiellement des rayonnements dans une plage de longueurs d'ondes supérieure à $g(l)0. Selon un autre mode de réalisation, une structure à couches filtres (70) est située en aval de la zone active. Ladite structure (70), qui comporte au moins une couche filtre (7, 7a, 7b, 7c), détermine le côté (101) des ondes courtes de la sensibilité (10) du détecteur selon la répartition de sensibilité spectrale prédéterminée (9) par absorption de longueurs d'ondes inférieures à $g(l)0. La présente invention concerne en outre un détecteur de rayonnements pour la détection de rayonnements (8) selon la répartition de sensibilité spectrale (9) de l'oeil humain. Le corps semi-conducteur peut être intégré de manière monolithique.
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