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1. WO2005096348 - FORCE SENSOR COMPRISING ORGANIC FIELD EFFECT TRANSISTORS AND PRESSURE SENSOR, POSITION SENSOR AND FINGERPRINT SENSOR THAT ARE BASED ON SAID FORCE SENSOR

Publication Number WO/2005/096348
Publication Date 13.10.2005
International Application No. PCT/DE2005/000559
International Filing Date 30.03.2005
Chapter 2 Demand Filed 12.12.2005
IPC
G01L 9/00 2006.01
GPHYSICS
01MEASURING; TESTING
LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
9Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
G06F 3/033 2006.01
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
FELECTRIC DIGITAL DATA PROCESSING
3Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
01Input arrangements or combined input and output arrangements for interaction between user and computer
03Arrangements for converting the position or the displacement of a member into a coded form
033Pointing devices displaced or positioned by the user; Accessories therefor
G06K 9/00 2006.01
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
KRECOGNITION OF DATA; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
9Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
H01L 51/30 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
30Selection of materials
CPC
G06K 9/00053
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
KRECOGNITION OF DATA; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
9Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
00006Acquiring or recognising fingerprints or palmprints
00013Image acquisition
00053Protecting the fingerprint sensor against damage caused by the finger
Applicants
  • INFINEON TECHNOLOGIES AG [DE]/[DE] (AllExceptUS)
  • KLAUK, Hagen [DE]/[DE] (UsOnly)
  • HALIK, Marcus [DE]/[DE] (UsOnly)
  • ZSCHIESCHANG, Ute [DE]/[DE] (UsOnly)
  • SCHMID, Günter [DE]/[DE] (UsOnly)
  • DARLINSKI, Grzegorz [DE]/[DE] (UsOnly)
  • WASER, Rainer [DE]/[DE] (UsOnly)
  • BREDERLOW, Ralf [DE]/[DE] (UsOnly)
Inventors
  • KLAUK, Hagen
  • HALIK, Marcus
  • ZSCHIESCHANG, Ute
  • SCHMID, Günter
  • DARLINSKI, Grzegorz
  • WASER, Rainer
  • BREDERLOW, Ralf
Agents
  • KOTTMANN, Dieter
Priority Data
10 2004 016 155.001.04.2004DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) KRAFTSENSOR MIT ORGANISCHEN FELDEFFEKTTRANSISTOREN, DARAUF BERUHENDER DRUCKSENSOR, POSITIONSSENSOR UND FINGERABDRUCKSENSOR
(EN) FORCE SENSOR COMPRISING ORGANIC FIELD EFFECT TRANSISTORS AND PRESSURE SENSOR, POSITION SENSOR AND FINGERPRINT SENSOR THAT ARE BASED ON SAID FORCE SENSOR
(FR) CAPTEUR DE FORCE COMPORTANT DES TRANSISTORS A EFFET DE CHAMP ORGANIQUES, ET CAPTEUR DE PRESSION, CAPTEUR DE POSITION ET CAPTEUR D'EMPREINTES DIGITALES REALISES A BASE DE CE CAPTEUR DE FORCE
Abstract
(DE)
Die Erfindung betrifft einen Kraftsensor auf der Basis eines auf einem Substrat (1; 11) aufgebrachten organischen Feldeffekttransistors (10), bei dem eine auf den Transistor einwirkende mechanische Kraft eine dieser Kraft entsprechende Änderung seiner Source-Drain-Spannung oder seines Source-Drain-Stroms (ID) verursacht, die jeweils als Messgröße (Vmess, Imess) für die einwirkende Kraft erfassbar sind, einen einen derartigen Kraftsensor verwendenden membranbasierten Drucksensor, einen eine Vielzahl derartiger Kraftsensoren verwendenden ein- oder zweidimensionalen Positionssensor und einen eine Vielzahl solcher Kraftsensoren verwendenden Fingerabdrucksensor.
(EN)
The invention relates to a force sensor based on an organic field effect transistor (10) that is applied to a substrate (1; 11). According to the invention, a mechanical force that acts on the transistor causes a corresponding modification of the source-drain voltage or the source-drain current (ID), whereby said modification can be respectively detected as a measured variable (Vmess, Imess) for the exerted force. The invention also relates to a membrane-based pressure sensor that uses a force sensor of this type, to a one- or two-dimensional position sensor that uses a plurality of force sensors of this type and to a fingerprint sensor that uses a plurality of force sensors of this type.
(FR)
L'invention concerne un capteur de force réalisé sur la base d'un transistor à effet de champ organique (10) appliqué sur un substrat (1; 11). Selon l'invention, une force mécanique appliquée sur le transistor provoque une variation correspondante de la tension source-drain ou du courant source-drain (ID) du transistor, pouvant être détectée en tant que grandeur de mesure (Vmess, Imess) caractérisant la force appliquée. L'invention concerne également un capteur de pression à membrane faisant intervenir un tel capteur de mesure, un capteur de position monodimensionnel ou bidimensionnel faisant intervenir une pluralité de tels capteurs de force, et un capteur d'empreintes digitales faisant intervenir une pluralité de tels capteurs de force.
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