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1. WO2005093804 - COMPOSITION FOR POLISHING SEMICONDUCTOR

Publication Number WO/2005/093804
Publication Date 06.10.2005
International Application No. PCT/JP2005/005768
International Filing Date 28.03.2005
IPC
B24B 37/00 2012.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
C09G 1/02 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
1Polishing compositions
02containing abrasives or grinding agents
C09K 3/14 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3Materials not provided for elsewhere
14Anti-slip materials; Abrasives
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/306 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
CPC
C09G 1/02
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS
1Polishing compositions
02containing abrasives or grinding agents
H01L 21/31053
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
31051Planarisation of the insulating layers
31053involving a dielectric removal step
Applicants
  • ニッタ・ハース株式会社 NITTA HAAS INCORPORATED [JP]/[JP] (AllExceptUS)
  • 太田 慶治 OHTA, Yoshiharu [JP]/[JP] (UsOnly)
  • 板井 康行 ITAI, Yasuyuki [JP]/[JP] (UsOnly)
Inventors
  • 太田 慶治 OHTA, Yoshiharu
  • 板井 康行 ITAI, Yasuyuki
Agents
  • 西教 圭一郎 SAIKYO, Keiichiro
Priority Data
2004-09684929.03.2004JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) COMPOSITION FOR POLISHING SEMICONDUCTOR
(FR) COMPOSITION POUR POLIR UN SEMI-CONDUCTEUR
(JA) 半導体研磨用組成物
Abstract
(EN)
Occurrence of polishing flaw on the surface of a semiconductor device is reduced significantly without damaging the advantage of fumed silica, i.e. high polishing speed, regardless of the fact that fumed silica is contained as a polishing agent. When a semiconductor wafer (3) mounted on a pad (2) attached to a polishing plate (1) is polished by rotating the pad (2) and a pressure head (4) while pressing the pressure head (4) against the semiconductor wafer (3) and supplying a polishing composition (5) to the surface of the pad (2), water dispersion of fumed silica where the number of fumed silica particles having a particle size of 0.5 μm or more is 600,000/ml or less and the number of fumed silica particles having a particle size of 1 μm or more is 4,000/ml or less is employed as the polishing composition (5).
(FR)
L’occurrence de défauts de polissage à la surface d’un dispositif semi-conducteur est réduite de manière significative sans endommager le bénéfice de la silice fumée, c’est-à-dire une vitesse élevée de polissage, sans égard au fait que la silice fumée fait partie d’un agent de polissage. Lorsqu’une puce semi-conductrice (3) montée sur un bloc (2) fixé sur un plateau rotatif (1) est polie en faisant tourner le bloc (2) et la tête de pression (4), tout en maintenant la tête de pression (4) contre la puce semi-conductrice (3) et en fournissant une composition de polissage (5) à la surface du bloc (2), la dispersion aqueuse de silice fumée dans laquelle le nombre de particules de silice fumée ayant une taille de particules de 0,5 µm ou plus est de 600 000/ml ou moins et le nombre de particules de silice fumée ayant une taille de particules de 1 µm ou plus est de 4 000/ml ou moins, est utilisée en tant que composition de polissage (5).
(JA)
 本発明の目的は、研磨剤としてヒュームドシリカを含有するにも係わらず、ヒュームドシリカの長所である高い研磨速度を損なうことなく、半導体デバイス表面の研磨傷の発生を著しく減少させることである。研磨定盤1に貼付されたパッド2に半導体ウエハ3を載せ、半導体ウエハ3に加圧ヘッド4を押し付け、かつ研磨用組成物5をパッド2表面に供給しながら、パッド2と加圧ヘッド4とを回転させて半導体ウエハ3の研磨を行うに際し、研磨用組成物5として、ヒュームドシリカの水分散液であって、粒径0.5μm以上のヒュームドシリカ粒子の粒子数が60万個/ml以下であり、かつ粒径1μm以上のヒュームドシリカ粒子の粒子数が4000個/ml以下である半導体研磨用組成物を用いることができる。
Also published as
Latest bibliographic data on file with the International Bureau