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1. WO2005093802 - COMPOSITION FOR POLISHING SEMICONDUCTOR

Publication Number WO/2005/093802
Publication Date 06.10.2005
International Application No. PCT/JP2005/005766
International Filing Date 28.03.2005
IPC
B24B 37/00 2012.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
C09G 1/02 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
1Polishing compositions
02containing abrasives or grinding agents
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/306 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
CPC
C09G 1/02
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS
1Polishing compositions
02containing abrasives or grinding agents
H01L 21/02024
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02002Preparing wafers
02005Preparing bulk and homogeneous wafers
02008Multistep processes
0201Specific process step
02024Mirror polishing
Applicants
  • ニッタ・ハース株式会社 NITTA HAAS INCORPORATED [JP]/[JP] (AllExceptUS)
  • 太田 慶治 OHTA, Yoshiharu [JP]/[JP] (UsOnly)
  • 板井 康行 ITAI, Yasuyuki [JP]/[JP] (UsOnly)
Inventors
  • 太田 慶治 OHTA, Yoshiharu
  • 板井 康行 ITAI, Yasuyuki
Agents
  • 西教 圭一郎 SAIKYO, Keiichiro
Priority Data
2004-09684729.03.2004JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) COMPOSITION FOR POLISHING SEMICONDUCTOR
(FR) COMPOSITION POUR POLIR UN SEMI-CONDUCTEUR
(JA) 半導体研磨用組成物
Abstract
(EN)
Polishing scratches in the surface of a semiconductor device are reduced significantly without damaging the advantage of fumed silica, i.e. high polishing speed, even though fumed silica is contained as a polishing agent. When a wafer (3) mounted on a pad (2) stuck to a turn table (1) is polished by exerting a load on the wafer (3) by means of a pressure head (4) and rotating the pad (2) and the pressure head (4), a water dispersion liquid of fumed silica having a mean particle size increase rate of 10% or less after 10-day shaking is employed as a polishing composition (5) supplied onto the pad (2). Since aggregation of fumed silica due to an external load and/or long term storage scarcely takes place, the number of polishing scratches in the surface of a polished semiconductor device is decreased significantly and a high-quality semiconductor device exhibiting excellent electrical connection reliability can be produced with high yield.
(FR)
Les stries de polissage à la surface d’un dispositif semi-conducteur sont réduites de manière significative sans endommager le bénéfice de la silice fumée, c’est-à-dire une vitesse élevée de polissage, même si la silice fumée fait partie d’un agent de polissage. Lorsqu’une puce (3) montée sur un bloc (2) collé sur un plateau rotatif (1) est polie en exerçant une force sur la puce (3) au moyen d’une tête de pression (4) et en faisant tourner le bloc (2) et la tête de pression (4), un liquide de dispersion aqueuse de silice fumée ayant un taux d’augmentation de la taille moyenne des particules de 10 % ou moins après 10 jours d’agitation est utilisé en tant que composition de polissage (5) fournie sur le bloc (2). Étant donné qu’il se produit rarement une agrégation de silice fumée en raison d’une charge externe et/ou d’une stockage de longue durée, le nombre de stries de polissage à la surface d'un dispositif semi-conducteur poli est réduit de manière significative et il est possible de produire avec un rendement élevé un dispositif semi-conducteur de grande qualité démontrant une excellente fiabilité de connexion électrique.
(JA)
 本発明の目的は、研磨剤としてヒュームドシリカを含有するにも係わらず、ヒュームドシリカの長所である高い研磨速度を損なうことなく、半導体デバイス表面の研磨傷の発生を著しく減少させることである。研磨定盤1に貼付されたパッド2上にウエハ3を載せ、ウエハ3に加圧ヘッド4により荷重をかけ、パッド2と加圧ヘッド4とを回転させてウエハ3を研磨するに際し、パッド2上に供給される研磨用組成物5として、ヒュームドシリカの水分散液であって、10日間振盪後の平均粒子径増加率が10%以下である研磨用組成物を用いる。これによって、外的負荷および/または長期保存によるヒュームドシリカの凝集がほとんど起こることがないので、研磨後の半導体デバイス表面の研磨傷の数が顕著に減少し、電気的な接続信頼性に優れる高品質の半導体デバイスを歩留り良く製造できる。
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