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1. (WO2005088726) AMORPHOUS OXIDE AND THIN FILM TRANSISTOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2005/088726 International Application No.: PCT/JP2005/003273
Publication Date: 22.09.2005 International Filing Date: 28.02.2005
Chapter 2 Demand Filed: 12.01.2006
IPC:
G02F 1/1345 (2006.01) ,G02F 1/1368 (2006.01) ,H01L 21/363 (2006.01) ,H01L 29/786 (2006.01)
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
1333
Constructional arrangements
1345
Conductors connecting electrodes to cell terminals
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136
Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362
Active matrix addressed cells
1368
in which the switching element is a three-electrode device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
363
using physical deposition, e.g. vacuum deposition, sputtering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
Applicants:
独立行政法人科学技術振興機構 JAPAN SCIENCE AND TECHNOLOGY AGENCY [JP/JP]; 〒3320012 埼玉県川口市本町4−1−8 Saitama 1-8, Honcho 4-chome, Kawaguchi-shi Saitama, 3320012, JP (AllExceptUS)
HOSONO, HIDEO [JP/JP]; JP (UsOnly)
HIRANO, MASAHIRO [JP/JP]; JP (UsOnly)
OTA, HIROMICHI [JP/JP]; JP (UsOnly)
KAMIYA, TOSHIO [JP/JP]; JP (UsOnly)
NOMURA, KENJI [JP/JP]; JP (UsOnly)
Inventors:
HOSONO, HIDEO; JP
HIRANO, MASAHIRO; JP
OTA, HIROMICHI; JP
KAMIYA, TOSHIO; JP
NOMURA, KENJI; JP
Agent:
西 義之 NISHI, Yoshiyuki; 〒2350036 神奈川県横浜市磯子区中原4−26−32−211 西特許事務所 Kanagawa Nishi Patent Office, Suite 211 26-32, Nakahara 4-chome, Isogo-ku Yokohama-shi, Kanagawa 2350036, JP
Priority Data:
2004-07147712.03.2004JP
2004-32593810.11.2004JP
Title (EN) AMORPHOUS OXIDE AND THIN FILM TRANSISTOR
(FR) OXYDE AMORPHE ET TRANSISTOR À FILM MINCE
(JA) アモルファス酸化物及び薄膜トランジスタ
Abstract:
(EN) An amorphous oxide and a thin film transistor using the amorphous oxide. More specifically, an amorphous oxide having an electron carrier concentration of less than 1018/cm3 and a thin film transistor using the amorphous oxide. The thin film transistor is provided with a source electrode (6), a drain electrode (5), a gate electrode (4), a gate insulating film (3) and a channel layer (2). As the channel layer (2), the amorphous oxide having an electron carrier concentration of less than 1018/cm3 is used.
(FR) Il est prévu un oxyde amorphe et un transistor à film mince utilisant l’oxyde amorphe. Plus spécifiquement, il est prévu un oxyde amorphe ayant une concentration de porteurs d’électrons inférieure à 1018/cm3 et un transistor à film mince utilisant l’oxyde amorphe. Le transistor à film mince est pourvu d’une électrode source (6), d’une électrode de drain (5), d’une électrode de grille (4), d’un film isolant à grille (3) et d’une couche de canal (2). Comme couche de canal (2), on utilise l’oxyde amorphe ayant une concentration de porteurs d’électrons inférieure à 1018/cm3.
(JA)  本発明は、アモルファス酸化物及びそれを用いた薄膜トランジスタに関する。具体的には、電子キャリア濃度が1018/cm未満のアモルファス酸化物、及びそれを用いた薄膜トランジスタを提供するものである。ソース電極6、ドレイン電極5、ゲート電極4、ゲート絶縁膜3、及びチャネル層2を有する薄膜トランジスタにおいて、前記チャネル層2として電子キャリア濃度が1018/cm未満であるアモルファス酸化物を用いる。
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
KR1020060123765KR1020070116888KR1020070116889KR1020090087130EP2226847EP2246894
EP1737044EP2413366US20070194379US20090280600JP4620046CN1998087
KR1020110089207