Processing

Please wait...

Settings

Settings

Goto Application

1. WO2005069376 - SOLID STATE IMAGING DEVICE, PROCESS FOR FABRICATING SOLID STATE IMAGING DEVICE AND CAMERA EMPLOYING SAME

Publication Number WO/2005/069376
Publication Date 28.07.2005
International Application No. PCT/JP2004/013700
International Filing Date 13.09.2004
IPC
H04N 5/225 2006.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
222Studio circuitry; Studio devices; Studio equipment
225Television cameras
CPC
G02B 5/201
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
5Optical elements other than lenses
20Filters
201in the form of arrays
G02B 5/285
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
5Optical elements other than lenses
20Filters
28Interference filters
285comprising deposited thin solid films
H01L 27/14621
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1462Coatings
14621Colour filter arrangements
H01L 27/14627
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14625Optical elements or arrangements associated with the device
14627Microlenses
H01L 27/14685
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
14685Process for coatings or optical elements
H04N 5/2254
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
222Studio circuitry; Studio devices; Studio equipment ; ; Cameras comprising an electronic image sensor, e.g. digital cameras, video cameras, TV cameras, video cameras, camcorders, webcams, camera modules for embedding in other devices, e.g. mobile phones, computers or vehicles
225Television cameras ; ; Cameras comprising an electronic image sensor, e.g. digital cameras, video cameras, camcorders, webcams, camera modules specially adapted for being embedded in other devices, e.g. mobile phones, computers or vehicles
2251Constructional details
2254Mounting of optical parts, e.g. lenses, shutters, filters or optical parts peculiar to the presence or use of an electronic image sensor
Applicants
  • 松下電器産業株式会社 MATSUSHITA ELECTRIC INDUSTRIAL CO.,LTD. [JP]/[JP] (AllExceptUS)
  • 稲葉 雄一 INABA, Yuuichi (UsOnly)
  • 笠野 真弘 KASANO, Masahiro (UsOnly)
  • 吉田 真治 YOSHIDA, Shinji (UsOnly)
  • 山口 琢己 YAMAGUCHI, Takumi (UsOnly)
Inventors
  • 稲葉 雄一 INABA, Yuuichi
  • 笠野 真弘 KASANO, Masahiro
  • 吉田 真治 YOSHIDA, Shinji
  • 山口 琢己 YAMAGUCHI, Takumi
Agents
  • 中島 司朗 NAKAJIMA, Shiro
Priority Data
2004-00841915.01.2004JP
2004-18919128.06.2004JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SOLID STATE IMAGING DEVICE, PROCESS FOR FABRICATING SOLID STATE IMAGING DEVICE AND CAMERA EMPLOYING SAME
(FR) DISPOSITIF D'IMAGERIE A L'ETAT SOLIDE, PROCEDE DE PRODUCTION DUDIT DISPOSITIF D'IMAGERIE A L'ETAT SOLIDE ET CAMERA UTILISANT LEDIT DISPOSITIF
(JA) 固体撮像装置、固体撮像装置の製造方法及びこれを用いたカメラ
Abstract
(EN)
A solid state imaging device comprising two &lgr;/4 multilayer films each consisting of a plurality of dielectric layers, and an insulator layer sandwiched by the &lgr;/4 multilayer films wherein the insulator layer selectively transmits an incident light using a color filter having an optical film thickness other than &lgr;/4. Since this constitution enables to employ a thin film color filter, the solid state imaging device can be reduced in size.
(FR)
L'invention concerne un dispositif d'imagerie à l'état solide comprenant deux films multicouche $g(l)/4, dont chacun consiste en une pluralité de couches diélectriques, et une couche isolante prise en sandwich entre les films multicouche $g(l)/4. La couche isolante transmet de manière sélective une lumière incidente à l'aide d'un filtre coloré dont l'épaisseur de film optique est différente de $g(l)/4. Comme cette structure permet d'utiliser un filtre coloré à film mince, les dimensions dudit dispositif d'imagerie à l'état solide peuvent être réduites.
(JA)
固体撮像装置において、それぞれ複数の誘電体層からなる2つのλ/4多層膜と、前記λ/4多層膜に挟まれた絶縁体層とを備え、前記絶縁体層はλ/4以外の光学膜厚を有するカラーフィルタを用いて入射光を選択的に透過させる。これによって、カラーフィルタを薄膜化することができるので固体撮像装置を小型化することができる。
Latest bibliographic data on file with the International Bureau