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1. (WO2005069356) PROCESS FOR PRODUCING MONOCRYSTAL THIN FILM AND MONOCRYSTAL THIN FILM DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/069356    International Application No.:    PCT/JP2004/019195
Publication Date: 28.07.2005 International Filing Date: 22.12.2004
Chapter 2 Demand Filed:    02.11.2005    
IPC:
C23C 16/01 (2006.01), C30B 25/02 (2006.01), H01L 21/20 (2006.01), H01L 21/205 (2006.01), H01L 31/04 (2006.01)
Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY [JP/JP]; 1-8, Hon-cho 4-chome Kawaguchi-shi, Saitama 3320012 (JP) (For All Designated States Except US).
NODA, Suguru [JP/JP]; (JP) (For US Only)
Inventors: NODA, Suguru; (JP)
Agent: SHIMIZU, Mamoru; Ohzono Bldg. 7-10, Kanda-mitoshiro-cho Chiyoda-ku, Tokyo 1010053 (JP)
Priority Data:
2004-007754 15.01.2004 JP
Title (EN) PROCESS FOR PRODUCING MONOCRYSTAL THIN FILM AND MONOCRYSTAL THIN FILM DEVICE
(FR) PROCEDE DE PRODUCTION D'UN FILM MINCE MONOCRISTALLIN ET DISPOSITIF A FILM MINCE MONOCRISTALLIN
(JA) 単結晶薄膜の製造方法及びその単結晶薄膜デバイス
Abstract: front page image
(EN)A process for producing a high-purity monocrystal silicon film exhibiting good lift-off, and a device obtained through that process. A monocrystal silicon substrate (cast Si substrate) (201) is prepared and an epitaxial sacrifice layer (202) is formed thereon. Subsequently, a monocrystal silicon film (203) is epitaxially grown on the sacrifice layer (202) quickly by RVD and then the sacrifice layer (202) is etched to obtain a solar cell power generation layer monocrystal silicon thin film (204).
(FR)L'invention concerne un procédé de production d'un film de silicium monocristallin à haute pureté présentant un bon décollement, et un dispositif obtenu par ce procédé. Un substrat de silicium monocristallin (substrat Si coulé) (201) est préparé et une couche sacrificielle épitaxiale (202) formée dessus. Un film de silicium monocristallin (203) est ensuite déposé rapidement sur la couche sacrificielle (202) par RVD, puis la couche sacrificielle (202) est gravée pour obtenir un film mince de silicium monocristallin (204) à couche génératrice d'énergie photovoltaïque.
(JA) 単結晶シリコン膜のリフトオフが良好であり、かつ高純度の単結晶シリコン膜を得ることができる単結晶薄膜の製造方法とそれを用いて得られるデバイスを提供する。  単結晶シリコン基板(鋳型Si基板)201を用意して、この単結晶シリコン基板201上にエピタキシャルな犠牲層202を形成する。次いで、この犠牲層202上に単結晶シリコン薄膜203をRVD法により急速にエピタキシャル成長させ、次に、前記犠牲層202をエッチングし、太陽電池発電層単結晶シリコン薄膜204を得る。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)