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1. WO2005068538 - METHOD FOR PRODUCING POLYMER, POLYMER, COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING INSULATING FILM, AND INSULATING FILM

Publication Number WO/2005/068538
Publication Date 28.07.2005
International Application No. PCT/JP2005/000372
International Filing Date 14.01.2005
IPC
H01L 21/312 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
312Organic layers, e.g. photoresist
CPC
C09D 183/14
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
183Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
14in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
H01B 3/30
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
3Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
18mainly consisting of organic substances
30plastics; resins; waxes
H01L 21/02126
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
02126the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
H01L 21/02216
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02205the layer being characterised by the precursor material for deposition
02208the precursor containing a compound comprising Si
02214the compound comprising silicon and oxygen
02216the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
H01L 21/02282
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02282liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
Applicants
  • JSR株式会社 JSR CORPORATION [JP]/[JP] (AllExceptUS)
  • 中川 恭志 NAKAGAWA, Hisashi [JP]/[JP] (UsOnly)
  • 秋山 将宏 AKIYAMA, Masahiro [JP]/[JP] (UsOnly)
  • 黒澤 孝彦 KUROSAWA, Takahiko [JP]/[JP] (UsOnly)
  • 塩田 淳 SHIOTA, Atsushi [JP]/[JP] (UsOnly)
Inventors
  • 中川 恭志 NAKAGAWA, Hisashi
  • 秋山 将宏 AKIYAMA, Masahiro
  • 黒澤 孝彦 KUROSAWA, Takahiko
  • 塩田 淳 SHIOTA, Atsushi
Agents
  • 大渕 美千栄 OFUCHI, Michie
Priority Data
2004-00920516.01.2004JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR PRODUCING POLYMER, POLYMER, COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING INSULATING FILM, AND INSULATING FILM
(FR) PROCEDE POUR PRODUIRE UN POLYMERE, POLYMERE, COMPOSITION POUR FORMER UN FILM ISOLANT, PROCEDE POUR PRODUIRE UN FILM ISOLANT, ET FILM ISOLANT
(JA) ポリマーの製造方法、ポリマー、絶縁膜形成用組成物、絶縁膜の製造方法、および絶縁膜
Abstract
(EN)
Disclosed is a method for producing a polymer which enables to form a film that can be suitably used, for example, as an interlayer insulating film in a semiconductor device, and has low relative dielectric constant, excellent mechanical strength and adhesiveness, and uniform film quality. Also disclosed are a polymer, a composition for forming an insulating film, a method for producing an insulating film and an insulating film. Specifically disclosed is a method for producing a polymer including hydrolysis-condensation of a silane monomer (B) containing a hydrolyzable group in the presence of a polycarbosilane (A) wherein the polycarbosilane (A) is a polymer (I) as defined below. A polymer (I) is obtained by reacting at least one compound selected from the group consisting of compounds (a) represented by the general formula (1) below, compounds (b) represented by the general formula (2) below and compounds (c) represented by the general formula (3) below in an organic solvent in the presence of at least one of an alkali metal and an alkaline earth metal. R1kCX4-k (1) R2kSiY4-k (2) R3mY3-mSiCR4nX3-n (3) (In the formulae, R1-R4 may be the same or different and respectively represent a monovalent organic group or a hydrogen atom; X represents a halogen atom; Y represents a halogen atom or an alkoxy group; k represents an integer of 0-3; and m and n may be the same or different and respectively represent an integer of 0-2.)
(FR)
La présente invention concerne un procédé pour produire un polymère qui permet la formation d'un film qui convient à l'utilisation, par exemple, en tant que film isolant inter-couches dans un dispositif à semi-conducteur, et a une constante diélectrique relative faible, une excellente résistance mécanique, un excellent pouvoir adhésif et une qualité de film uniforme. L'invention a également pour objet un polymère, une composition pour former un film isolant, un procédé pour produire un film isolant, et un film isolant correspondant. L'invention concerne en particulier un procédé pour produire un polymère, comprenant la condensation par hydrolyse d'un monomère de silane (B) contenant un groupe hydrolysable, en la présence d'un polycarbosilane (A), le polycarbosilane (A) étant un polymère (I) défini de la manière suivante. Le polymère (I) est obtenu par réaction d'au moins un composé choisi dans le groupe comprenant des composés (a) de formule générale (1) représentée ci-dessous, des composés (b) de formule générale (2) représentée ci-dessous et des composés (c) de formule générale (3) représentée ci-dessous, dans un solvant organique, en la présence d'au moins un métal alcalin et d'un métal alcalino-terreux. R1kCX4-k (1) R2kSiY4-k (2) R3mY3-mSiCR4nX3-n (3) (Dans ces formules, R1-R4 peuvent être identiques ou différents et représentent respectivement un groupe organique monovalent ou un atome d'hydrogène; X représente un atome d'halogène; Y représente un atome d'halogène ou un groupe alcoxy; k est un nombre entier qui vaut de 0 à 3; m et n peuvent être identiques ou différents et représentent respectivement un entier qui vaut de 0 à 2.)
(JA)
 例えば半導体素子などにおける層間絶縁膜として好適に用いることができ、かつ、比誘電率が小さく、機械的強度や密着性に優れ、均一な膜質を有する膜を形成することができるポリマーの製造方法、ポリマー、絶縁膜形成用組成物、絶縁膜の製造方法、および絶縁膜を提供する。  本発明のポリマーの製造方法は、(A)ポリカルボシランの存在下、(B)加水分解性基含有シランモノマーを加水分解縮合することを含み、前記(A)ポリカルボシランが、以下のポリマー(I)である。  (I)(a)下記一般式(1)で表される化合物と、(b)下記一般式(2)で表される化合物および下記一般式(3)で表される化合物の群から選ばれた少なくとも1種とを、有機溶媒中でアルカリ金属およびアルカリ土類金属の少なくとも一方の存在下にて反応させて得られるポリマー(I):   R CX4−k    ・・・・・(1)   R SiY4−k   ・・・・・(2)   R 3−mSiCR 3−n     ・・・・・(3)  (式中、R~Rは同一または異なり、それぞれ1価の有機基または水素原子を示し、Xはハロゲン原子を示し、Yはハロゲン原子またはアルコキシ基を示し、kは0~3の整数を示し、mおよびnは同一または異なり、0~2の整数を示す。)
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