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1. (WO2005067472) SYNTHETIC ANTIFERROMAGNET STRUCTURES FOR USE IN MTJS IN MRAM TECHNOLOGY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/067472    International Application No.:    PCT/US2004/037058
Publication Date: 28.07.2005 International Filing Date: 04.11.2004
IPC:
H01L 29/76 (2006.01), H01L 31/113 (2006.01)
Applicants: FREESCALE SEMICONDUCTOR, INC. [US/US]; 6501 William Cannon Drive West, Austin, TX 78735 (US) (For All Designated States Except US).
PIETAMBARAM, Srinivas V. [IN/US]; (US) (For US Only).
DAVE, Renu W. [US/US]; (US) (For US Only).
SLAUGHTER, Jon M. [US/US]; (US) (For US Only).
SUN, Jijun [CN/US]; (US) (For US Only)
Inventors: PIETAMBARAM, Srinivas V.; (US).
DAVE, Renu W.; (US).
SLAUGHTER, Jon M.; (US).
SUN, Jijun; (US)
Agent: KING, Robert, L.; Corporate Law Department, Intellectual Property Section, 7700 West Parmer Lane, MD: TX32/PL02, Austin, TX 78729 (US)
Priority Data:
10/740,338 18.12.2003 US
Title (EN) SYNTHETIC ANTIFERROMAGNET STRUCTURES FOR USE IN MTJS IN MRAM TECHNOLOGY
(FR) STRUCTURES ANTIFERROMAGNETIQUES SYNTHETIQUES UTILISEES EN TECHNOLOGIE DES JONCTIONS TUNNEL MAGNETIQUE DANS DES MEMOIRES VIVES MAGNETORESISTIVES
Abstract: front page image
(EN)A magnetic tunnel junction (MTJ) (10), which is useful in magnetoresistive random access memories (MRAMs), has a free layer (14) which is a synthetic antiferromagnet (SAF) structure. This SAF (14) is composed of two ferromagnetic layers (26, 30) that are separated by a coupling layer (28). The coupling layer (28) has a base material that is non-magnetic and also other materials that improve thermal endurance, control of the coupling strength of the SAF (14), and magnetoresistance ratio (MR). The preferred base material is ruthenium and the preferred other material is tantalum. Furthering these benefits, cobalt-iron is added at the interface between the tantalum and one of the ferromagnetic layers. Also the coupling layer (28) can have even more layers (38, 40) and the materials used can vary. Also the coupling layer (28) itself can be an alloy.
(FR)L'invention concerne une jonction tunnel magnétique (MTJ) (10), utile dans des mémoires vives magnétorésistives (MRAM), qui possède une couche libre (14), soit une structure antiferromagnétique synthétique (SAF) (14), laquelle (14) est constituée de deux couches ferromagnétiques (26, 30) séparées par une couche de couplage (28). Ladite couche de couplage (28) a un matériau de base non magnétique et d'autres matériaux qui améliorent la résistance thermique, la commande de la force de couplage de la SAF (14) et la magnétorésistance (MR). Le ruthénium est le matériau de base préféré, le tantale étant l'autre matériau préféré. A l'appui de ces avantages, on ajoute du cobalt-fer à l'interface entre le tantale et l'une des couches ferromagnétiques. En outre la couche de couplage (28) peut même comporter plus de couches (38, 40) et les matériaux utilisés peuvent varier. De plus, la couche de couplage (28) peut elle-même être un alliage.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)