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1. (WO2005067113) SEMICONDUCTOR LIGHT-EMITTING DEVICE AND ITS MANUFACTURING METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/067113    International Application No.:    PCT/JP2004/019566
Publication Date: 21.07.2005 International Filing Date: 27.12.2004
IPC:
H01S 5/02 (2006.01), H01S 5/042 (2006.01), H01S 5/183 (2006.01), H01S 5/42 (2006.01), H01S 5/026 (2006.01), H01S 5/20 (2006.01), H01S 5/30 (2006.01)
Applicants: HAMAMATSU PHOTONICS K.K. [JP/JP]; 1126-1, Ichino-cho, Hamamatsu-shi, Shizuoka 4358558 (JP) (For All Designated States Except US).
TANAKA, Akimasa [JP/JP]; (JP) (For US Only)
Inventors: TANAKA, Akimasa; (JP)
Agent: HASEGAWA, Yoshiki; SOEI PATENT AND LAW FIRM, Ginza First Bldg., 10-6, Ginza 1-chome, Chuo-ku, Tokyo 1040061 (JP)
Priority Data:
2004-002318 07.01.2004 JP
Title (EN) SEMICONDUCTOR LIGHT-EMITTING DEVICE AND ITS MANUFACTURING METHOD
(FR) DISPOSITIF PHOTOEMETTEUR A SEMI-CONDUCTEUR ET SON PROCEDE DE FABRICATION
(JA) 半導体発光素子及びその製造方法
Abstract: front page image
(EN)A semiconductor light-emitting device comprises a multilayer structural body and a glass substrate. The multilayer structural body includes compound semiconductor layers sequentially formed and generates light. The multilayer structural body has a light-emitting surface from which the generated light is emitted. A glass substrate optically transparent to the light is bonded to the light-emitting surface with a film of silicon oxide.
(FR)Cette invention se rapporte à un dispositif photoémetteur à semi-conducteur, qui comprend un corps de structure multicouche et un substrat en verre. Le corps de structure multicouche contient des couches de semi-conducteur composé formées séquentiellement et il produit de la lumière. Ce corps de structure multicouche présente une surface photoémettrice depuis laquelle est émise la lumière produite. Un substrat de verre optiquement transparent à la lumière est collé à la surface photoémettrice au moyen d'un film d'oxyde de silicium.
(JA) 半導体発光素子は、多層構造体と、ガラス基板とを備える。多層構造体は、積層された複数の化合物半導体層を含んでおり、光を生成する。多層構造体は、生成される光を発する光出射面を有しており、その光に対して光学的に透明なガラス基板が、酸化シリコンからなる膜によって光出射面に接着されている。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)