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Machine translation
1. (WO2005067055) TRANSISTOR GATE ELECTRODE HAVING CONDUCTOR MATERIAL LAYER
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/067055    International Application No.:    PCT/US2004/043663
Publication Date: 21.07.2005 International Filing Date: 22.12.2004
IPC:
H01L 21/28 (2006.01), H01L 21/8234 (2006.01), H01L 21/8238 (2006.01), H01L 29/10 (2006.01), H01L 29/49 (2006.01)
Applicants: INTEL CORPORATION [US/US]; 2200 Mission College Boulevard, Santa Clara, CA 95052 (US) (For All Designated States Except US).
MURPHY, Anand [IN/US]; (US) (For US Only).
BOYANOV, Boyan [BG/US]; (US) (For US Only).
DATTA, Suman [IN/US]; (US) (For US Only).
DOYLE, Brian, S. [IE/US]; (US) (For US Only).
JIN, Been-Yih [US/US]; (US) (For US Only).
YU, Shaofeng [US/US]; (US) (For US Only).
CHAU, Robert [US/US]; (US) (For US Only)
Inventors: MURPHY, Anand; (US).
BOYANOV, Boyan; (US).
DATTA, Suman; (US).
DOYLE, Brian, S.; (US).
JIN, Been-Yih; (US).
YU, Shaofeng; (US).
CHAU, Robert; (US)
Agent: VINCENT, Lester, J.; Blakely, Sokoloff, Taylor & Zafman LLP, 12400 Wilshire Boulevard, 7th Floor, Los Angeles, CA 90025 (US)
Priority Data:
10/745,978 24.12.2003 US
Title (EN) TRANSISTOR GATE ELECTRODE HAVING CONDUCTOR MATERIAL LAYER
(FR) ELECTRODE DE GRILLE DE TRANSISTOR, COMPORTANT UNE COUCHE DE MATERIAU CONDUCTEUR
Abstract: front page image
(EN)Various embodiments of the invention relates to a PMOS device having a transistor channel of silicon germanium material on a substrate, a gate dielectric having a dielectric constant greater than that of silicon dioxide on the channel, a gate electrode conductor material having a work function in a range between a valence energy band edge and a conductor energy band edge for silicon on the gate dielectric, and a gate electrode semiconductor material on the gate electrode conductor material.
(FR)Divers modes de réalisation de l'invention concernent un dispositif PMOS comportant un canal de transistor en germanium silicium situé sur un substrat, un diélectrique de grille ayant une constante diélectrique supérieure à celle du dioxyde de silicium, situé sur le canal, un matériau conducteur d'électrode de grille ayant une fonction comprise entre une limite de bande de valence et une limite de bande de conductivité pour le silicium, situé sur le diélectrique de grille, ainsi qu'un matériau semi-conducteur d'électrode de grille, situé sur le matériau conducteur d'électrode de grille.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)