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Machine translation
1. (WO2005067018) METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2005/067018    International Application No.:    PCT/JP2004/019662
Publication Date: 21.07.2005 International Filing Date: 21.12.2004
IPC:
H01L 21/265 (2006.01), H01L 21/324 (2006.01)
Applicants: ROHM CO., LTD. [JP/JP]; 21, Saiin Mizosaki-cho Ukyo-ku, Kyoto-shi Kyoto 6158585 (JP) (For All Designated States Except US).
MIURA, Mineo [JP/JP]; (JP) (For US Only)
Inventors: MIURA, Mineo; (JP)
Agent: INAOKA, Kosaku; c/o Ai Association of Patent and Trademark Attorneys Sun Mullion NBF Tower, 21st Floor 6-12, Minamihommachi 2-chome, Chuo-ku Osaka-shi, Osaka 5410054 (JP)
Priority Data:
2004-002259 07.01.2004 JP
Title (EN) METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
(FR) PROCEDE DE PRODUCTION D'UN DISPOSITIF A SEMI-CONDUCTEURS
(JA) 半導体装置の製造方法
Abstract: front page image
(EN)A method for producing a semiconductor device employing an SiC semiconductor substrate (1) in which the SiC semiconductor substrate (1) is mounted on a susceptor (23), a C heating member (3) made of carbon is arranged on the surface of the SiC semiconductor substrate (1), and the susceptor (23) and the C heating member (3) are heated at high temperature, thus forming an impurity region in the surface of the SiC semiconductor substrate (1) by annealing.
(FR)L'invention porte sur un procédé de production d'un dispositif à semi-conducteurs utilisant un substrat à semi-conducteurs SiC (1) qui est monté sur un suscepteur (23), un élément chauffant C (3) constitué de carbone est disposé sur la surface du substrat à semi-conducteurs SiC (1), et le suscepteur (23) et l'élément chauffant C (3) sont chauffés à haute température, ce qui forme une région d'impuretés dans la surface du substrat à semi-conducteurs SiC (1) par recuit.
(JA)SiC(1)半導体基板を用いた半導体装置の製造工程において、サセプタ(23)上にSiC半導体基板(1)を載置し、そのSiC半導体基板(1)の表面上にカーボン製のC発熱部材(3)を配置して、サセプタ(23)およびC発熱部材(3)を高温に発熱させることによって、SiC半導体基板(1)の表面に不純物領域が形成するためのアニール処理を達成する。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)